PUMB1

Marking：B3；Package：SC-88；PNP/PNP resistor-equipped transistors; R1 = 22 k, R2 = 22 k

Featuresandbenefits 100mAoutputcurrentcapability Built-inbiasresistors Simplifiescircuitdesign Reducescomponentcount Reducespickandplacecosts AEC-Q101qualified

PUMB1

Low VCEsat (BISS) transistors

PUMB10

Marking：B0；Package：SOT363；PNP/PNP resistor-equipped transistors; R1 = 2.2 k, R2 = 47 k

1.1Generaldescription PNP/PNPResistor-EquippedTransistors(RET)inSurface-MountedDevice(SMD)plastic packages. 1.2Featuresandbenefits 1.3Applications Lowcurrentperipheraldriver ControlofICinputs Replacesgeneral-purposetransistorsindigitalapplications Table1.Pr

PUMB10

Marking：B0；Package：TSSOP6；50 V, 100 mA PNP/PNP resistor-equipped double transistor; R1 = 2.2 kΩ, R2 = 47 kΩ

1.Generaldescription PNP/PNPdoubleResistor-EquippedTransistor(RET)inaverysmallSOT363(SC-88)Surface- MountedDevice(SMD)plasticpackage. NPN/PNPcomplement:PUMD10 NPN/NPNcomplement:PUMH10 2.Featuresandbenefits •100mAoutputcurrentcapability •Built-inbiasresistor

PUMB10

Marking：B0；Package：SC-88；PNP/PNP resistor-equipped transistors; R1 = 2.2 k, R2 = 47 k

Featuresandbenefits 100mAoutputcurrentcapability Built-inbiasresistors Simplifiescircuitdesign Reducescomponentcount Reducespickandplacecosts AEC-Q101qualified

PUMB11

PNP resistor-equipped double transistor

DESCRIPTION PNPresistor-equippeddoubletransistorinanSC-88(SOT363)plasticpackage. FEATURES •Transistorswithbuilt-inbiasresistorsR1andR2 (typ.10kΩeach) •Nomutualinterferencebetweenthetransistors •Simplificationofcircuitdesign •Reducesnumberofcomponentsand

PUMB11

Marking：B1；Package：TSSOP6；PNP/PNP resistor-equipped double transistor; R1 = 10 kΩ, R2 = 10 kΩ

1.Generaldescription PNP/PNPdoubleResistor-EquippedTransistor(RET)inaverySOT363(SC-88)Surface-Mounted Device(SMD)plasticpackage. NPN/PNPcomplement:PUMD3 NPN/NPNcomplement:PUMH11 2.Featuresandbenefits •100mAoutputcurrentcapability •Built-inbiasresistors •Sim

PUMB11-Q

Marking：B1；Package：TSSOP6；PNP/PNP resistor-equipped double transistors; R1 = 10 kΩ, R2 = 10 kΩ

1.Generaldescription PNP/PNPResistor-EquippedTransistors(RET)inaverySOT363(SC-88)Surface-Mounted Device(SMD)plasticpackage. 2.Featuresandbenefits •100mAoutputcurrentcapability •Built-inbiasresistors •Simplifiescircuitdesign •Reducescomponentcount •Reduces

PUMB13

PNP/PNP resistor-equipped transistors; R1 = 4.7 kohm, R2 = 47 kohm

DESCRIPTION PNP/PNPresistor-equippedtransistors(see“Simplifiedoutline,symbolandpinning”forpackagedetails). FEATURES •Built-inbiasresistors •Simplifiedcircuitdesign •Reductionofcomponentcount •Reducedpickandplacecosts. APPLICATIONS •Lowcurrent

PUMB13

Marking：B5；Package：SC-88；PNP/PNP resistor-equipped transistors; R1 = 4.7 k, R2 = 47 k

Featuresandbenefits 100mAoutputcurrentcapability Built-inbiasresistors Simplifiescircuitdesign Reducescomponentcount Reducespickandplacecosts AEC-Q101qualified