PNP resistor-equipped double transistor

DESCRIPTION PNP resistor-equipped double transistor in an SC-88 (SOT363) plastic package. FEATURES • Transistors with built-in bias resistors R1 and R2 (typ. 10 kΩ each) • No mutual interference between the transistors • Simplification of circuit design • Reduces number of components and

文件：60.33 Kbytes 页数：8 Pages

PHI

PHI

PNP/PNP resistor-equipped transistors; R1 = 10 k廓, R2 = 10 k廓

General description PNP/PNP Resistor-Equipped Transistors (RET) in Surface-Mounted Device (SMD) plastic packages. Features and benefits ■ 100 mA output current capability ■ Built-in bias resistors ■ Simplifies circuit design ■ Reduces component count ■ Reduces pick and place costs ■ AEC-Q1

文件：144.11 Kbytes 页数：8 Pages

恩XP

丝印：B1；Package：TSSOP6；PNP/PNP resistor-equipped double transistor; R1 = 10 kΩ, R2 = 10 kΩ

1. General description PNP/PNP double Resistor-Equipped Transistor (RET) in a very SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package. NPN/PNP complement: PUMD3 NPN/NPN complement: PUMH11 2. Features and benefits • 100 mA output current capability • Built-in bias resistors • Sim

文件：794.94 Kbytes 页数：11 Pages

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安世

Low VCEsat (BISS) transistors

文件：948.33 Kbytes 页数：12 Pages

PHI

PHI

丝印：B1；Package：TSSOP6；PNP/PNP resistor-equipped double transistors; R1 = 10 kΩ, R2 = 10 kΩ

1. General description PNP/PNP Resistor-Equipped Transistors (RET) in a very SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package. 2. Features and benefits • 100 mA output current capability • Built-in bias resistors • Simplifies circuit design • Reduces component count • Reduces

文件：237.04 Kbytes 页数：12 Pages

NEXPERIA

安世

PNP/PNP resistor-equipped transistors; R1 = 10 kΩ, R2 = 10 kΩ

General description\nPNP/PNP Resistor-Equipped Transistors (RET) in Surface-Mounted Device (SMD) plastic packages.Features and benefits\n■ 100 mA output current capability\n■ Built-in bias resistors\n■ Simplifies circuit design\n■ Reduces component count\n■ Reduces pick and place costs\n■ AEC-Q101 q

恩XP

PNP/PNP resistor-equipped transistors; R1 = 10 kΩ, R2 = 10 kΩ

PNP/PNP Resistor-Equipped Transistors (RET) in Surface-Mounted Device (SMD) plastic packages. • 100 mA output current capability\n• Built-in bias resistors\n• Simplifies circuit design\n• Reduces component count\n• Reduces pick and place costs\n• AEC-Q101 qualified;

Nexperia

安世

PNP/PNP resistor-equipped double transistors; R1 = 10 kΩ, R2 = 10 kΩ

PNP/PNP Resistor-Equipped Transistors (RET) in a very SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package. • 100 mA output current capability\n• Built-in bias resistors\n• Simplifies circuit design\n• Reduces component count\n• Reduces pick and place costs\n• Qualified according to AEC-Q101 and recommended for use in automotive applications;

Nexperia

安世