Thermally-Enhanced High Power RF LDMOS FET 650 W, 48 V, 755 – 805 MHz

Description The PTRA087008NB is a 650-watt LDMOS FET. It is designed for use in multistandard cellular power amplifier applications from 755 MHz to 805 MHz. Manufactured with Wolfspeed’s advanced LDMOS process, this device provides excellent thermal performance and superior reliability Feature

文件：731.2 Kbytes 页数：11 Pages

WOLFSPEED

Thermally-Enhanced High Power RF LDMOS FET 415 W, 48 V, 925 – 960 MHz

Description The PTRA093818NF is a 415-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 925 to 960 MHz frequency band. Features include input matching, high gain and thermally-enhanced package with earless flanges. Manufactured with Wolfspeed’s adva

文件：685.79 Kbytes 页数：10 Pages

WOLFSPEED

Thermally-Enhanced High Power RF LDMOS FET 415 W, 48 V, 925 – 960 MHz

Description The PTRA093818NF is a 415-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 925 to 960 MHz frequency band. Features include input matching, high gain and thermally-enhanced package with earless flanges. Manufactured with Wolfspeed’s adva

文件：685.79 Kbytes 页数：10 Pages

WOLFSPEED

Thermally-Enhanced High Power RF LDMOS FET 480 W, 48 V, 859 – 960 MHz

Description The PTRA094808NF is a 480-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 859 to 960 MHz frequency band. Features include input and output matching, high gain and thermally-enhanced package with earless flange. Manufactured with Wolfsp

文件：696.94 Kbytes 页数：10 Pages

WOLFSPEED

Thermally-Enhanced High Power RF LDMOS FET 480 W, 48 V, 859 – 960 MHz

Description The PTRA094808NF is a 480-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 859 to 960 MHz frequency band. Features include input and output matching, high gain and thermally-enhanced package with earless flange. Manufactured with Wolfsp

文件：696.94 Kbytes 页数：10 Pages

WOLFSPEED

Thermally-Enhanced High Power RF LDMOS FET 400 W, 48 V, 859 – 960 MHz

Description The PTRA094858NF is a 400-watt Doherty LDMOS transistor intended for use in multi-standard cellular power amplifier applications in the 859 to 960 MHz frequency band. Features include input and output matching, high gain and thermally-enhanced package with earless flange. Manufactu

文件：1.03197 Mbytes 页数：9 Pages

WOLFSPEED

Thermally-Enhanced High Power RF LDMOS FET 400 W, 48 V, 859 – 960 MHz

Description The PTRA094858NF is a 400-watt Doherty LDMOS transistor intended for use in multi-standard cellular power amplifier applications in the 859 to 960 MHz frequency band. Features include input and output matching, high gain and thermally-enhanced package with earless flange. Manufactu

文件：1.03197 Mbytes 页数：9 Pages

WOLFSPEED

Thermally-Enhanced High Power RF LDMOS FET 520 W, 48 V, 925 – 960 MHz

Description The PTRA095908NB is a 520-watt (P3dB) LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 925 to 960 MHz frequency band. Features include input and output matching, high gain and thermally-enhanced plastic overmold package with earless flange.

文件：739.37 Kbytes 页数：9 Pages

WOLFSPEED

Thermally-Enhanced High Power RF LDMOS FET 520 W, 48 V, 925 – 960 MHz

Description The PTRA095908NB is a 520-watt (P3dB) LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 925 to 960 MHz frequency band. Features include input and output matching, high gain and thermally-enhanced plastic overmold package with earless flange.

文件：739.37 Kbytes 页数：9 Pages

WOLFSPEED

Thermally-Enhanced High Power RF LDMOS FET 630 W, 48 V, 920 – 960 MHz

Description The PTRA097008NB is a 630-watt LDMOS FET intended for use in multistandard cellular power amplifier applications in the 920 to 960 MHz frequency band. Features include input and output matching, high gain and thermally-enhanced package with earless flanges. Manufactured with Wolfsp

文件：556.13 Kbytes 页数：10 Pages

WOLFSPEED