Thermally-Enhanced High Power RF LDMOS FET 415 W, 48 V, 925 – 960 MHz

Description The PTRA093818NF is a 415-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 925 to 960 MHz frequency band. Features include input matching, high gain and thermally-enhanced package with earless flanges. Manufactured with Wolfspeed’s adva

文件：685.79 Kbytes 页数：10 Pages

WOLFSPEED

Thermally-Enhanced High Power RF LDMOS FET 415 W, 48 V, 925 ??960 MHz

文件：470.28 Kbytes 页数：10 Pages

INFINEON

英飞凌

Thermally-Enhanced High Power RF LDMOS FET 415 W, 48 V, 925 ??960 MHz

文件：600.56 Kbytes 页数：10 Pages

CREE

科锐

Thermally-Enhanced High Power RF LDMOS FET 415 W, 48 V, 925 – 960 MHz

Description The PTRA093818NF is a 415-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 925 to 960 MHz frequency band. Features include input matching, high gain and thermally-enhanced package with earless flanges. Manufactured with Wolfspeed’s adva

文件：685.79 Kbytes 页数：10 Pages

WOLFSPEED

Thermally-Enhanced High Power RF LDMOS FET 415 W, 48 V, 925 – 960 MHz

Infineon

英飞凌

Cellular (700 MHz to 1000 MHz)

High Power RF LDMOS FET, 415 W, 48 V, 925 - 960 MHz ·Broadband internal input matching\n ·Asymmetrical design   - Main : P 1dB = 165 W Typ   - Peak : P 1dB = 250 W Typ\n ·Typical Pulsed CW performance, 960 MHz, 48 V, Doherty configuration   - Output power at P 3dB = 375 W   - Efficiency = 55%   - Gain = 18 dB\n ·Capable of handling 10:1 VSWR @;

Infineon

英飞凌

High Power RF LDMOS FET 415 W; 48 V; 925 - 960 MHz

The PTRA093818NF is a 415-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 925 to 960 MHz frequency band. Features include input matching; high gain and thermally-enhanced package with earless flanges. Manufactured with an advanced LDMOS process; this de ·Broadband internal input matching\n·Asymmetrical design: Main P1dB = 165 W Typ; Peak P1dB = 250 W Typ\n·Typical Pulsed CW performance; 960 MHz; 48 V; Doherty configuration; Output power at P3dB = 375 W; Efficiency = 55%; Gain = 18 dB\n·Capable of handling 10:1 VSWR @ 48 V; 81.4 W CW output powe;

MACOM

Package：HBSOF-6-2；包装：带 类别：分立半导体产品 晶体管 - FET，MOSFET - 射频 描述：IC RF LDMOS FET 6HBSOF

WOLFSPEED