PTRA093818NFV1数据手册Infineon中文资料规格书

描述 Description

High Power RF LDMOS FET, 415 W, 48 V, 925 - 960 MHz

特性 Features

·Broadband internal input matching
·Asymmetrical design   - Main : P 1dB = 165 W Typ   - Peak : P 1dB = 250 W Typ
·Typical Pulsed CW performance, 960 MHz, 48 V, Doherty configuration   - Output power at P 3dB = 375 W   - Efficiency = 55%   - Gain = 18 dB
·Capable of handling 10:1 VSWR @ 48 V, 81.4 W CW output power
·Integrated ESD protection
·Human Body Model class 1C (per ANSI/ESDA/JEDEC JS-001)
·Low thermal resistance
·Pb-free and RoHS compliant