PTRA093302FCV1数据手册Infineon中文资料规格书

描述 Description

High Power RF LDMOS FET, 330 W, 50 V, 746 – 768 MHz

特性 Features

·Input matched
·Asymmetric Doherty design - Main: P 1dB = 150 W Typ - Peak: P 1dB = 175 W Typ
·Typical Pulsed CW performance, 746–768 MHz, 48 V, combined outputs - Output power at P 1dB = 200 W - Efficiency = 54% - Gain = 16.5 dB
·Capable of handling 10:1 VSWR @ 48 V, 79 W (CW) output power
·Integrated ESD protection
·Human Body Model Class 1C (per ANSI/ESDA/JEDEC JS-001)
·Low thermal resistance
·Pb-free and RoHS-compliant