Thermally-Enhanced High Power RF LDMOS FET 480 W, 48 V, 859 – 960 MHz

Description The PTRA094808NF is a 480-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 859 to 960 MHz frequency band. Features include input and output matching, high gain and thermally-enhanced package with earless flange. Manufactured with Wolfsp

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Thermally-Enhanced High Power RF LDMOS FET 480 W, 48 V, 859 ??960 MHz

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Infineon

英飞凌

Thermally-Enhanced High Power RF LDMOS FET480 W, 48 V, 859 ??960 MHz

文件：599.94 Kbytes 页数：10 Pages

Cree

科锐

Thermally-Enhanced High Power RF LDMOS FET 480 W, 48 V, 859 – 960 MHz

Description The PTRA094808NF is a 480-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 859 to 960 MHz frequency band. Features include input and output matching, high gain and thermally-enhanced package with earless flange. Manufactured with Wolfsp

文件：696.94 Kbytes 页数：10 Pages

WOLFSPEED

Thermally-Enhanced High Power RF LDMOS FET 480 W, 48 V, 859 – 960 MHz

Infineon

英飞凌

Cellular (700 MHz to 1000 MHz)

High Power RF LDMOS FET, 480 W, 48 V, 859 - 960 MHz ·Broadband internal input and output matching\n ·Asymmetrical design - Main : P 1dB = 210 W Typ - Peak : P 1dB = 340 W Typ\n ·Typical Pulsed CW performance, 896 MHz, 48 V, Doherty configuration - Output power at P 1dB = 300 W - Output power at P 3dB = 420 W - Efficiency = 53% - Gain = 17.5 dB\;

Infineon

英飞凌

High Power RF LDMOS FET 480 W; 48 V; 859 - 960 MHz

The PTRA094808NF is a 480-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 859 to 960 MHz frequency band. Features include input and output matching; high gain and thermally-enhanced package with earless flanges. Manufactured with an advanced LDMOS proce · Broadband internal input and output matching\n·Asymmetrical design: Main P1dB = 210 W Typ; Peak P1dB = 340 W Typ\n·Typical Pulsed CW performance; 896 MHz; 48 V; Doherty configuration: Output power at P1dB = 300 W; Output power at P3dB = 420 W; Efficiency = 53%; Gain = 17.5 dB\n·Capable of hand;

MACOM

Package：HBSOF-6-2；包装：带 类别：分立半导体产品 晶体管 - FET，MOSFET - 射频 描述：IC RF LDMOS FET 6HBSOF

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