PTRA094808NFV1数据手册Infineon中文资料规格书

描述 Description

High Power RF LDMOS FET, 480 W, 48 V, 859 - 960 MHz

特性 Features

·Broadband internal input and output matching
·Asymmetrical design - Main : P 1dB = 210 W Typ - Peak : P 1dB = 340 W Typ
·Typical Pulsed CW performance, 896 MHz, 48 V, Doherty configuration - Output power at P 1dB = 300 W - Output power at P 3dB = 420 W - Efficiency = 53% - Gain = 17.5 dB
·Capable of handling 10:1 VSWR @ 48 V, 100 W (CW) output power
·Integrated ESD protection
·Human Body Model class 1C (per ANSI/ESDA/JEDEC JS-001)
·Low thermal resistance
·Pb-free and RoHS compliant