Thermally-Enhanced High Power RF LDMOS FET 520 W, 48 V, 925 – 960 MHz

Description The PTRA095908NB is a 520-watt (P3dB) LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 925 to 960 MHz frequency band. Features include input and output matching, high gain and thermally-enhanced plastic overmold package with earless flange.

文件：739.37 Kbytes 页数：9 Pages

WOLFSPEED

Thermally-Enhanced High Power RF LDMOS FET 520 W, 48 V, 925 – 960 MHz

Description The PTRA095908NB is a 520-watt (P3dB) LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 925 to 960 MHz frequency band. Features include input and output matching, high gain and thermally-enhanced plastic overmold package with earless flange.

文件：739.37 Kbytes 页数：9 Pages

WOLFSPEED

High Power RF LDMOS FET; 520 W; 48 V; 925 - 960 MHz

The PTRA095908NB is a 520-watt (P3dB) LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 925 to 960 MHz frequency band. Features include input and output matching; high gain and thermally-enhanced plastic overmold package with earless flange. ·Broadband internal input and output matching\n·Asymmetric Doherty design Main: P1dB = 250 W Typ Peak: P1dB = 400 W Typ\n·Typical pulsed CW performance; 942 MHz; 48 V; Doherty configuration; 10 μs; 10% duty cycle Output power at P1dB = 160 W Output power at P3dB = 520 W Efficiency = 58% (POU;

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