PTFC270101MV1R1K数据手册Infineon中文资料规格书

描述 Description

High Power RF LDMOS FET, 10W, 28V, 900 – 2700MHz

特性 Features

·Unmatched input and output
·Typical CW performance, 2170 MHz, 28 V - Output power @ P1dB = 10W - Gain = 20 dB - Efficiency = 60%
·Typical two-carrier WCDMA performance, 2170 MHz, 28 V, 8 dB PAR - Output power = 1.3 W avg - Gain = 21 dB - Efficiency = 21% - ACPR = –44.9 dBc @ 5 MHz
·Capable of handling 10:1 VSWR @ 28 V, 10 W (CW) output power
·Integrated ESD protection
·Pb-free and RoHS compliant
·Evaluation boards available: LTN/PTFC270101M V1 – 2110 to 2170 MHz LTN/PTFC270101M E3 – 2620 to 2690 MHz LTN/PTFC270101M E4 – 920 to 960 MHz LTN/PTFC270101M E5 – 1930 to 1990 MHz LTN/PTFC270101M E6 – 1805 to 1880 MHz LTN/PTFC270101M E7 – 2400 to 2500 MHz