PTFC270051MV2R1K数据手册Infineon中文资料规格书

描述 Description

High Power RF LDMOS FET, 5 W, 28 V, 900 – 2700 MHz

特性 Features

·Unmatched
·Typical CW performance, 940 MHz, 28 V - Output power (P1dB) = 6.5 W - Gain = 23 dB - Efficiency = 62%
·Typical CW performance, 2170 MHz, 28 V - Output power (P1dB) = 7.3 W - Gain = 20.3 dB - Efficiency = 60%
·Typical CW performance, 2655 MHz, 28 V  Output power (P1dB) = 7.3 W - Gain = 19.9 dB - Efficiency = 59.5%
·Capable of handling 10:1 VSWR @ 28 V, 5 W (CW) output power
·Integrated ESD protection: Human Body Model Class 1A (per JESD22-A114)
·Pb-free and RoHS compliant
·Evaluation boards available : LTN/PTFC270051M V2 – 2110 to 2170 MHz LTN/PTFC270051M E3 – 2620 to 2690 MHz LTN/PTFC270051M E4 – 920 to 960 MHz LTN/PTFC270051M E5 – 1930 to 1990 MHz LTN/PTFC270051M E6 – 1805 to 1880 MHz