PTFC270051M-V2数据手册分立半导体产品的晶体管-FETMOSFET-射频规格书PDF

描述 Description

UnmatchedTypical CW performance; 940 MHz; 28 V: Output power (P1dB) = 6.5 W; Gain = 23 dB; Efficiency = 62%Typical CW performance; 2655 MHz; 28 V: Output power (P1dB) = 7.3 W; Gain = 19.9 dB; Efficiency = 59.5%Capable of handling 10:1 VSWR @ 28 V; 5 W (CW) output powerIntegrated ESD protection: Human Body Model Class 1A (per JESD22-A114)Pb-free and RoHS compliant

特性 Features

• Unmatched
• Typical CW performance; 940 MHz; 28 V: Output power (P1dB) = 6.5 W; Gain = 23 dB; Efficiency = 62%
• Typical CW performance; 2655 MHz; 28 V: Output power (P1dB) = 7.3 W; Gain = 19.9 dB; Efficiency = 59.5%
• Capable of handling 10:1 VSWR @ 28 V; 5 W (CW) output power
• Integrated ESD protection: Human Body Model Class 1A (per JESD22-A114)
• Pb-free and RoHS compliant

应用 Application

• Multi-standard Cellular Power Amplifiers