PTFC270101M-V1中文资料High Power RF LDMOS FET 10 W, 28 V, 900 – 2700 MHz数据手册MACOM规格书

描述 Description

Unmatched input and outputTypical CW performance; 2170 MHz; 28 V: Output power @ P1dB = 10 W; Gain = 20 dB; Efficiency = 60%Typical two-carrier WCDMA performance; 2170 MHz; 28 V; 8 dB PAR: Output power = 1.3 W avg; Gain = 21 dB; Efficiency = 21%; ACPR = –44.9 dBc @ 5 MHzCapable of handling 10:1 VSWR @ 28 V; 10 W (CW) output powerIntegrated ESD protectionPb-free and RoHS compliant

特性 Features

• Unmatched input and output
• Typical CW performance; 2170 MHz; 28 V: Output power @ P1dB = 10 W; Gain = 20 dB; Efficiency = 60%
• Typical two-carrier WCDMA performance; 2170 MHz; 28 V; 8 dB PAR: Output power = 1.3 W avg; Gain = 21 dB; Efficiency = 21%; ACPR = –44.9 dBc @ 5 MHz
• Capable of handling 10:1 VSWR @ 28 V; 10 W (CW) output power
• Integrated ESD protection
• Pb-free and RoHS compliant

应用 Application

• Multi-standard Cellular Power Amplifiers