PTFB211501EV1中文资料Cellular (2000 MHz to 2200 MHz)数据手册Infineon规格书

描述 Description

High Power RF LDMOS FET, 150 W, 30 V, 2110 – 2170 MHz

特性 Features

·Broadband internal matching
·Typical single-carrier WCDMA performance at 2170 MHz, 30 V, IDQ = 1.2 A, 3GPP signal, channel bandwidth = 3.84 MHz, PAR = 8.5 dB @ 0.01% CCDF - Average output power = 40 W - Linear Gain = 18 dB - Efficiency = 32% - Adjacent channel power = –34 dBc
·Typical CW performance, 2170 MHz, 30 V - Output power at P1dB = 150 W - Efficiency = 55%
·Integrated ESD protection: Human Body Model, Class 2 (minimum)
·Capable of handling 10:1 VSWR @ 30 V, 150 W (CW) output power
·Pb-free and RoHS compliant
·Package: H-36248-2, bolt-down