PTFA092201EV4数据手册Infineon中文资料规格书

描述 Description

High Power RF LDMOS FET, 220 W, 30 V, 920 – 960 MHz

特性 Features

·Broadband internal matching
·Typical two-carrier WCDMA performance at 960 MHz, 30 V - Average output power = 55 W - Linear Gain = 18.5 dB - Efficiency = 30% - Intermodulation distortion = –37 dBc - Adjacent channel power = –39 dBc
·Typical CW performance, 960 MHz, 30 V - Output power at P1dB = 250 W - Gain = 17.5 dB - Efficiency = 59%
·Integrated ESD protection. Human Body Model, Class 2 (minimum)
·Excellent thermal stability, low HCI drift
·Capable of handling 10:1 VSWR @ 30 V, 220 W (CW) output power
·Pb-free, RoHS-compliant
·Package: H-36260-2, bolt-down