PTFA091201EV4中文资料Cellular (700 MHz to 1000 MHz)数据手册Infineon规格书

描述 Description

High Power RF LDMOS FET, 120 W, 28 V, 920 – 960 MHz

特性 Features

·Broadband internal matching
·Typical EDGE performance, - Average output power = 50 W - Gain = 19 dB - Efficiency = 44%
·Typical CW performance - Output power at P1dB = 135 W - Gain = 18 dB - Efficiency = 64%
·Capable of handling 10:1 VSWR @ 28 V, 120 W (CW) output power
·Integrated ESD protection. Human Body Model, Class 2 (minimum)
·Excellent thermal stability, low HCI drift
·Pb-free and RoHS compliant
·Package: H-36248-2, bolt-down