PTFA080551EV4中文资料Cellular (700 MHz to 1000 MHz)数据手册Infineon规格书

描述 Description

High Power RF LDMOS FET, 55W, 869 - 960MHz

特性 Features

·Broadband internal matching
·Typical EDGE performance - Average output power = 26 W - Gain = 18 dB, Efficiency = 44%
·Typical CW performance - Output power at P1dB = 75 W - Gain = 17 dB - Efficiency = 67%
·Capable of handling 10:1 VSWR @ 28 V, 55 W (CW) output power
·Integrated ESD protection. Human Body Model, Class 2 (minimum)
·Excellent thermal stability, low HCI drift
·Pb-free and RoHS compliant
·Package: H-36265-2, bolt-down

简介

PTFA080551EV4属于分立半导体产品的晶体管-FETMOSFET-射频。由制造生产的PTFA080551EV4晶体管 - FET，MOSFET - 射频射频晶体管、FET 和 MOSFET 是具有三个端子的半导体器件，器件中电流受电场控制。该系列器件用于涉及射频的设备。用于放大或切换信号或功率的晶体管类型包括：E-pHEMT、LDMOS、MESFET、N 沟道、P 沟道、pHEMT、碳化硅、2 N 沟道和 4 N 沟道。