Cellular (700 MHz to 1000 MHz)

High Power RF LDMOS FET, 55W, 869 - 960MHz ·Broadband internal matching\n ·Typical EDGE performance - Average output power = 26 W - Gain = 18 dB, Efficiency = 44%\n ·Typical CW performance - Output power at P1dB = 75 W - Gain = 17 dB - Efficiency = 67%\n ·Capable of handling 10:1 VSWR @ 28 V, 55 W (CW) output power\n ·Integr;

Infineon

英飞凌

Thermally-Enhanced High Power RF LDMOS FETs

文件：4.43668 Mbytes 页数：11 Pages

Infineon

英飞凌

Thermally-Enhanced High Power RF LDMOS FETs

文件：4.43668 Mbytes 页数：11 Pages

Infineon

英飞凌

Thermally-Enhanced High Power RF LDMOS FETs

文件：4.43668 Mbytes 页数：11 Pages

Infineon

英飞凌

Thermally-Enhanced High Power RF LDMOS FETs

文件：4.43668 Mbytes 页数：11 Pages

Infineon

英飞凌

包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - FET，MOSFET - 射频 描述：IC FET RF LDMOS 55W H-36265-2

Infineon

英飞凌