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零件编号	下载&订购	功能描述	制造商&上传企业	LOGO
12N90	文件：192.21 Kbytes Page：5 Pages	12A,900VN-CHANNELPOWERMOSFET	UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司	UTC
12N90	文件：49.38 Kbytes Page：2 Pages	FastSwitching	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
IXFH12N90	文件：372.76 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=12A@TC=25℃ ·DrainSourceVoltage :VDSS=900V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.9Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
IXFH12N90	文件：295.27 Kbytes Page：8 Pages	HIPERFETPowerMOSFTETs HiPerFETs ThehIPerFETfamilyofPowerMOSFETsisdesignedtoprovicesuperiordv/dt,performancewhileeliminatingtheneedfordiscrete,faserecoveryfreewheelingrectifiersInaboardrangeofpowerswitchingapplications.	IXYS IXYS Integrated Circuits Division	IXYS
IXFH12N90	文件：85.99 Kbytes Page：4 Pages	HiPerFETPowerMOSFETs	IXYS IXYS Integrated Circuits Division	IXYS
IXFH12N90P	文件：184.73 Kbytes Page：4 Pages	PolarPowerMOSFETHiPerFET Polar™HiPerFET™PowerMOSFET N-ChannelEnhancementModeAvalancheRated FastIntrinsicDiode Features •InternationalStandardPackages •AvalancheRated •LowPackageInductance •FastIntrinsicDiode Advantages •EasytoMount •SpaceSavings •HighPowerDensity Applications: •Sw	IXYS IXYS Integrated Circuits Division	IXYS
IXFH12N90P	文件：234.64 Kbytes Page：5 Pages	PowerMOSFET	IXYS IXYS Integrated Circuits Division	IXYS
IXFH12N90P	文件：372.77 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=12A@TC=25℃ ·DrainSourceVoltage :VDSS=900V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.9Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
IXFH12N90Q	文件：373.25 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=12A@TC=25℃ ·DrainSourceVoltage :VDSS=900V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.9Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
IXFH12N90Q	文件：58.04 Kbytes Page：2 Pages	HiPerFETPowerMOSFETsQClass Features •IXYSadvancedlowQgprocess •Lowgatechargeandcapacitances -easiertodrive -fasterswitching •Internationalstandardpackages •LowRDS(on) •UnclampedInductiveSwitching(UIS)rated •MoldingepoxiesmeetUL94V-0 flammabilityclassification Advantages	IXYS IXYS Integrated Circuits Division	IXYS
IXFM12N90	文件：317.84 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=12A@TC=25℃ ·DrainSourceVoltage :VDSS=900V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.8Ω(Max) ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS ·Switchingapplications	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
IXFM12N90	文件：295.27 Kbytes Page：8 Pages	HIPERFETPowerMOSFTETs HiPerFETs ThehIPerFETfamilyofPowerMOSFETsisdesignedtoprovicesuperiordv/dt,performancewhileeliminatingtheneedfordiscrete,faserecoveryfreewheelingrectifiersInaboardrangeofpowerswitchingapplications.	IXYS IXYS Integrated Circuits Division	IXYS
IXFM12N90	文件：85.99 Kbytes Page：4 Pages	HiPerFETPowerMOSFETs	IXYS IXYS Integrated Circuits Division	IXYS
IXFT12N90Q	文件：58.04 Kbytes Page：2 Pages	HiPerFETPowerMOSFETsQClass Features •IXYSadvancedlowQgprocess •Lowgatechargeandcapacitances -easiertodrive -fasterswitching •Internationalstandardpackages •LowRDS(on) •UnclampedInductiveSwitching(UIS)rated •MoldingepoxiesmeetUL94V-0 flammabilityclassification Advantages	IXYS IXYS Integrated Circuits Division	IXYS
IXFV12N90P	文件：234.64 Kbytes Page：5 Pages	PowerMOSFET	IXYS IXYS Integrated Circuits Division	IXYS
IXFV12N90P	文件：184.73 Kbytes Page：4 Pages	PolarPowerMOSFETHiPerFET Polar™HiPerFET™PowerMOSFET N-ChannelEnhancementModeAvalancheRated FastIntrinsicDiode Features •InternationalStandardPackages •AvalancheRated •LowPackageInductance •FastIntrinsicDiode Advantages •EasytoMount •SpaceSavings •HighPowerDensity Applications: •Sw	IXYS IXYS Integrated Circuits Division	IXYS
IXFV12N90PS	文件：184.73 Kbytes Page：4 Pages	PolarPowerMOSFETHiPerFET Polar™HiPerFET™PowerMOSFET N-ChannelEnhancementModeAvalancheRated FastIntrinsicDiode Features •InternationalStandardPackages •AvalancheRated •LowPackageInductance •FastIntrinsicDiode Advantages •EasytoMount •SpaceSavings •HighPowerDensity Applications: •Sw	IXYS IXYS Integrated Circuits Division	IXYS
IXFV12N90PS	文件：234.64 Kbytes Page：5 Pages	PowerMOSFET	IXYS IXYS Integrated Circuits Division	IXYS
IXFZ12N90	文件：295.27 Kbytes Page：8 Pages	HIPERFETPowerMOSFTETs HiPerFETs ThehIPerFETfamilyofPowerMOSFETsisdesignedtoprovicesuperiordv/dt,performancewhileeliminatingtheneedfordiscrete,faserecoveryfreewheelingrectifiersInaboardrangeofpowerswitchingapplications.	IXYS IXYS Integrated Circuits Division	IXYS
IXGH12N90C	文件：37.17 Kbytes Page：2 Pages	HiPerFASTIGBTLightspeedSeries Features •VeryhighfrequencyIGBT •NewgenerationHDMOSTMprocess •InternationalstandardpackageJEDECTO-247 •Highpeakcurrenthandlingcapability Applications •PFCcircuit •ACmotorspeedcontrol •DCservoandrobotdrives •Switch-modeandresonant-modepowersupplies •High	IXYS IXYS Integrated Circuits Division	IXYS

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供应商	型号	品牌	批号	封装	库存	备注	价格
艾睿国际（香港）有限公司	PTF12N90	PIP(丽隽)	2112+	TO-247	105000	25个/管一级代理专营品牌!原装正品,优势现货,长期	询价
深圳市弘扬芯城科技有限公司	PTF12N90	PIP(丽隽)	23+	TO2473	6000	诚信服务，绝对原装原盘	询价
深圳市百视威讯电子科技有限公司	PTF12N90		23+	N/A	65700	一级代理放心采购	询价
深圳市骏创达科技有限公司	PTF-140-01-L-D	SAMTEC/申泰	2308+		364825	一级代理,原装正品,公司现货!	询价
贸泽芯城（深圳）电子科技有限公司	PTF-140-01-L-D	SAMTEC/申泰		2021	11200	原厂授权一级代理、全球订货优势渠道、可提供一站式BO	询价
深圳市凯斯宇科技有限公司	PTF140451E	infineon	2022		109	原厂原装正品,价格超越代理	询价
深圳市一线半导体有限公司	PTF140451E	INF			1		询价
深圳市科恒伟业电子有限公司	PTF140451E	INFINEON	2016+	NA	4558	只做进口原装现货!假一赔十!	询价
千层芯半导体(深圳)有限公司	PTF140451E	INFINEON	2018+	SMD	5500	长期供应原装现货实单可谈	询价
深圳市华斯顿科技有限公司	PTF140451E	INFINEON	22+23+	NA	26324	绝对原装正品全新进口深圳现货	询价

更多PTF12N90供应商更新时间2024-6-19 15:00:00

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