NPN/PNP resistor-equipped transistors; R1 = 2.2 k廓, R2 = 47 k廓

General description NPN/PNP Resistor-Equipped Transistors (RET) in Surface-Mounted Device (SMD) plastic packages. Features and benefits ■ 100 mA output current capability ■ Reduces component count ■ Built-in bias resistors ■ Reduces pick and place costs ■ Simplifies circuit design ■ AEC

文件：149.75 Kbytes 页数：9 Pages

恩XP

丝印：D0；Package：SC-88；NPN/PNP resistor-equipped transistors; R1 = 2.2 k, R2 = 47 k

Features and benefits  100 mA output current capability  Built-in bias resistors  Simplifies circuit design  Reduces component count  Reduces pick and place costs  AEC-Q101 qualified

文件：1.06562 Mbytes 页数：17 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

PNP/PNP resistor-equipped transistors; R1 = 2.2 k, R2 = 47 k

Features and benefits  100 mA output current capability  Built-in bias resistors  Simplifies circuit design  Reduces component count  Reduces pick and place costs  AEC-Q101 qualified

文件：917.23 Kbytes 页数：16 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

NPN/PNP resistor-equipped transistors

Developed especially for the automotive sector, 500 mA RETs combine a transistor with two resistors to provide an optimal integrated solution for digital applications in automotive systems, for example control units. Also an extensive portfolio with single and double 100 mA RETs is available for s

文件：63.86 Kbytes 页数：12 Pages

PHI

飞利浦

Low VCEsat (BISS) transistors

文件：948.33 Kbytes 页数：12 Pages

PHI

飞利浦

丝印：D0；Package：TSSOP6；NPN/PNP double Resistor-Equipped Transistor; R1 = 2.2 kΩ, R2 = 47 kΩ

1. General description NPN/PNP double Resistor-Equipped Transistor (RET) in a very small SOT363 (SC-88) Surface- Mounted Device (SMD) plastic package. 2. Features and benefits • 100 mA output current capability • Built-in bias resistors • Simplifies circuit design • Reduces component coun

文件：279.92 Kbytes 页数：15 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

NPN/PNP double Resistor-Equipped Transistor; R1=2.2kΩ,R2=47kΩ

NPN/PNP double Resistor-Equipped Transistor (RET) in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package. • 100 mA output current capability\n• Built-in bias resistors\n• Simplifies circuit design\n• Reduces component count\n• Reduces pick and place costs\n• AEC-Q101 qualified;

Nexperia

安世

NPN/PNP double Resistor-Equipped Transistor; R1 = 2.2 kΩ, R2 = 47 kΩ

NPN/PNP double Resistor-Equipped Transistor (RET) in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package. • 100 mA output current capability\n• Built-in bias resistors\n• Simplifies circuit design\n• Reduces component count\n• Reduces pick and place costs\n• Qualified according to AEC-Q101 and recommended for use in automotive applications;

Nexperia

安世