丝印：5H0S40；Package：SOT1210；N-channel 40 V, 5 mΩ, standard level MOSFET in LFPAK33 using NextPower-S3 technology

1. General description 85 A, standard level N-channel enhancement mode MOSFET in 175 °C LFPAK33 package using advanced TrenchMOS Superjunction technology. This product has been designed and qualified for high efficiency applications at high switching frequencies. 2. Features and benefits • Av

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N-channel 40 V, 5 mΩ, standard level MOSFET in LFPAK33 using NextPower-S3 technology

1. General description 85 A, standard level N-channel enhancement mode MOSFET in 175 °C LFPAK33 package using advanced TrenchMOS Superjunction technology. This product has been designed and qualified for high efficiency applications at high switching frequencies. 2. Features and benefits • Av

文件：306.38 Kbytes 页数：12 Pages

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丝印：PSMN5R0-80BS；Package：SOT404；N-channel 80 V, 5.1 mΩ standard level MOSFET in D2PAK

1.1 General description Standard level N-channel MOSFET in SOT404 package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits  High efficiency due to low switching and conduction

文件：818.01 Kbytes 页数：15 Pages

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isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 100A@ TC=25℃ ·Drain Source Voltage -VDSS= 80V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 5.1mΩ(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

文件：349.8 Kbytes 页数：2 Pages

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无锡固电

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 100A@ TC=25℃ ·Drain Source Voltage -VDSS= 80V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 5.1mΩ(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

文件：372.39 Kbytes 页数：2 Pages

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无锡固电

N-channel 80 V 4.7 mΩ standard level MOSFET

1.1 General description Standard level N-channel MOSFET in TO220 package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High efficiency due to low switching and conduction lo

文件：731.63 Kbytes 页数：13 Pages

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N-channel 100 V 5 m廓 standard level MOSFET in I2PAK

文件：203.2 Kbytes 页数：15 Pages

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N-channel 100 V 5 m廓 standard level MOSFET in I2PAK

文件：203.2 Kbytes 页数：15 Pages

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N-channel 100 V 5 m廓 standard level MOSFET in TO-220

文件：208.73 Kbytes 页数：15 Pages

PHI

PHI

N-channel 100 V 5 m廓 standard level MOSFET in TO-220

文件：208.73 Kbytes 页数：15 Pages

PHI

PHI