PSMN5R0-40MSH中文资料安世数据手册PDF规格书

1. General description

85 A, standard level N-channel enhancement mode MOSFET in 175 °C LFPAK33 package using

advanced TrenchMOS Superjunction technology. This product has been designed and qualified for

high efficiency applications at high switching frequencies.

2. Features and benefits

• Avalanche rated, 100 tested

• NextPower-S3 technology delivers 'superfast switching with soft body-diode recovery'

• Low QRR, QG and QGD for high system efficiency, especially at high switching frequencies

• Low spiking and ringing for low EMI designs

• High reliability clip bonded and solder die attach Mini Power SO8 package; no glue, no wire

bonds, qualified to 175 °C

• Exposed leads can be wave soldered, visual solder joint inspection and high quality solder

joints

• Low parasitic inductance and resistance

3. Applications

• Secondary side synchronous rectification

• DC-to-DC converters

• Brushless DC motor drive

• LED lighting