isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 120A@ TC=25℃ ·Drain Source Voltage -VDSS= 100V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 5mΩ(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

文件：349.86 Kbytes 页数：2 Pages

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无锡固电

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 120A@ TC=25℃ ·Drain Source Voltage -VDSS= 100V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 5mΩ(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

文件：285.6 Kbytes 页数：2 Pages

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无锡固电

N-channel 100 V 5 mΩ standard level MOSFET in I2PAK

1.1 General description Standard level N-channel MOSFET in a I2PAK package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits  High efficiency due to low switching and conduction

文件：816.07 Kbytes 页数：15 Pages

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N-channel 100 V 5 mΩ standard level MOSFET in TO-220

1.1 General description Standard level N-channel MOSFET in a TO-220 package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits  High efficiency due to low switching and conductio

文件：816.67 Kbytes 页数：15 Pages

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isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 120A@ TC=25℃ ·Drain Source Voltage -VDSS= 100V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 5mΩ(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

文件：372.42 Kbytes 页数：2 Pages

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NextPower 25 V & 30 V MOSFETs in LFPAK(Power-SO8)

Key applications } Synchronous buck regulators } DC-DC conversion } Voltage regulator modules (VRM) } Power OR-ing

文件：1.78504 Mbytes 页数：8 Pages

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NextPower 25 V & 30 V MOSFETs in LFPAK(Power-SO8)

Key applications } Synchronous buck regulators } DC-DC conversion } Voltage regulator modules (VRM) } Power OR-ing

文件：1.78504 Mbytes 页数：8 Pages

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N-channel 30 V 5 mΩ logic level MOSFET in LFPAK

1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in industrial and communications applications. 1.2 Features and benefits High efficiency due to low swi

文件：822.41 Kbytes 页数：14 Pages

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丝印：5H0L40；Package：SOT1210；N-channel 40 V, 5 mΩ, logic level MOSFET in LFPAK33 using NextPower-S3 technology

1. General description 85 A, logic level N-channel enhancement mode MOSFET in 175 °C LFPAK33 package using advanced TrenchMOS Superjunction technology. This product has been designed and qualified for high efficiency applications at high switching frequencies. 2. Features and benefits • Avala

文件：303.35 Kbytes 页数：12 Pages

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N-channel 40 V, 5 mΩ, logic level MOSFET in LFPAK33 using NextPower-S3 technology

1. General description 85 A, logic level N-channel enhancement mode MOSFET in 175 °C LFPAK33 package using advanced TrenchMOS Superjunction technology. This product has been designed and qualified for high efficiency applications at high switching frequencies. 2. Features and benefits • Avala

文件：303.35 Kbytes 页数：12 Pages

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