PSMN038

N-channel enhancement mode field-effect transistor

Description SiliconMAX™1productsusethelatestPhilipsTrenchMOS™2technologytoachievethelowestpossibleon-stateresistanceinaSOT96-1(SO8)package. Productavailability: PSMN038-100KinSOT96-1(SO8) Features ■Verylowon-stateresistance ■Fastswitching ■TrenchMOS™technol

PSMN038-100HS

Marking：38RS10H；Package：LFPAK56D；N-channel 100 V, 37.6 mOhm, standard level MOSFET in LFPAK56D using TrenchMOS technology

Generaldescription DualstandardlevelN-channelMOSFETinanLFPAK56D(DualPower-SO8)packageusing TrenchMOStechnology. Featuresandbenefits •HighpeakdraincurrentIDM •CopperclipandflexibleLeads •HighoperatingjunctiontemperatureTj=175°C •Superiorreliability •Low

PSMN038-100K

N-channel enhancement mode field-effect transistor

Description SiliconMAX™1productsusethelatestPhilipsTrenchMOS™2technologytoachievethelowestpossibleon-stateresistanceinaSOT96-1(SO8)package. Productavailability: PSMN038-100KinSOT96-1(SO8) Features ■Verylowon-stateresistance ■Fastswitching ■TrenchMOS™technol

PSMN038-100K

N-Channel 100 V (D-S) MOSFET

FEATURES •Halogen-freeAccordingtoIEC61249-2-21 Definition •ExtremelyLowQgdforSwitchingLosses •100RgTested •100AvalancheTested •ComplianttoRoHSDirective2002/95/EC APPLICATIONS •PrimarySideSwitch

PSMN038-100K

N-channel TrenchMOS SiliconMAX standard level FET

1.1Generaldescription SiliconMAXstandardlevelN-channelenhancementmodeField-EffectTransistor(FET)in aplasticpackageusingTrenchMOStechnology.Thisproductisdesignedandqualifiedfor useincomputing,communications,consumerandindustrialapplicationsonly. 1.2Featuresandb

PSMN038-100YL

Marking：038100；Package：LFPAK56；N-channel 100 V 37.5 m廓 logic level MOSFET in LFPAK56

PSMN038-100YL_15

N-channel 100 V 37.5 m廓 logic level MOSFET in LFPAK56