N-channel enhancement mode field-effect transistor

Description SiliconMAX™1 products use the latest Philips TrenchMOS™2 technology to achieve the lowest possible on-state resistance in a SOT96-1 (SO8) package. Product availability: PSMN038-100K in SOT96-1 (SO8) Features ■ Very low on-state resistance ■ Fast switching ■ TrenchMOS™ technol

文件：271.02 Kbytes 页数：13 Pages

PHI

飞利浦

丝印：38RS10H；Package：LFPAK56D；N-channel 100 V, 37.6 mOhm, standard level MOSFET in LFPAK56D using TrenchMOS technology

General description Dual standard level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) package using TrenchMOS technology. Features and benefits • High peak drain current IDM • Copper clip and flexible Leads • High operating junction temperature Tj = 175 °C • Superior reliability • Low

文件：281.48 Kbytes 页数：12 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

N-channel TrenchMOS SiliconMAX standard level FET

1.1 General description SiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 1.2 Features and b

文件：886.37 Kbytes 页数：12 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

N-channel enhancement mode field-effect transistor

Description SiliconMAX™1 products use the latest Philips TrenchMOS™2 technology to achieve the lowest possible on-state resistance in a SOT96-1 (SO8) package. Product availability: PSMN038-100K in SOT96-1 (SO8) Features ■ Very low on-state resistance ■ Fast switching ■ TrenchMOS™ technol

文件：271.02 Kbytes 页数：13 Pages

PHI

飞利浦

N-channel TrenchMOS SiliconMAX standard level FET

General description SiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. Features and benefits ■

文件：402.17 Kbytes 页数：12 Pages

恩XP

N-Channel 100 V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • Extremely Low Qgd for Switching Losses • 100 Rg Tested • 100 Avalanche Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Primary Side Switch

文件：611.22 Kbytes 页数：9 Pages

VBSEMI

微碧半导体

丝印：038100；Package：LFPAK56；N-channel 100 V 37.5 m廓 logic level MOSFET in LFPAK56

文件：753 Kbytes 页数：13 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

N-channel 100 V 37.5 m廓 logic level MOSFET in LFPAK56

文件：328.52 Kbytes 页数：13 Pages

PHI

飞利浦

N-channel 100 V, 37.6 mOhm, standard level MOSFET in LFPAK56D using TrenchMOS technology

Dual standard level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) package using TrenchMOS technology. • High peak drain current IDM\n• Copper clip and flexible Leads\n• High operating junction temperature Tj = 175 °C\n• Superior reliability\n• Low body diode reverse recovery charge Qr;

Nexperia

安世

PSMN038-100K - N-channel TrenchMOS SiliconMAX standard level FET

N-channel TrenchMOS SiliconMAX standard level FET - SiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications on ·Low conduction losses due to low on-state resistance\n·Suitable for high frequency applications due to fast switching characteristics;

Nexperia

安世