丝印：038100；Package：LFPAK56；N-channel 100 V 37.5 m廓 logic level MOSFET in LFPAK56

文件：753 Kbytes 页数：13 Pages

NEXPERIA

安世

N-channel 100 V 37.5 m廓 logic level MOSFET in LFPAK56

文件：328.52 Kbytes 页数：13 Pages

PHI

飞利浦

N-channel 100 V 37.5 mΩ logic level MOSFET in LFPAK56

Logic level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in LFPAK56 package. This product has been designed and qualified for use in a wide range of industrial, communications and domestic equipment. • High efficiency due to low switching and conduction losses\n• LFPAK56 package is footprint compatible with other Power-SO8 types\n• Qualified to 175 °C;

Nexperia

安世

N-channel 100 V, 37.6 mOhm, standard level MOSFET in LFPAK56D using TrenchMOS technology

General description Dual standard level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) package using TrenchMOS technology. Features and benefits • High peak drain current IDM • Copper clip and flexible Leads • High operating junction temperature Tj = 175 °C • Superior reliability • Low

文件：281.48 Kbytes 页数：12 Pages

NEXPERIA

安世

N-Channel 100 V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • Extremely Low Qgd for Switching Losses • 100 Rg Tested • 100 Avalanche Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Primary Side Switch

文件：611.22 Kbytes 页数：9 Pages

VBSEMI

微碧半导体