丝印：38RS10H；Package：LFPAK56D；N-channel 100 V, 37.6 mOhm, standard level MOSFET in LFPAK56D using TrenchMOS technology

General description Dual standard level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) package using TrenchMOS technology. Features and benefits • High peak drain current IDM • Copper clip and flexible Leads • High operating junction temperature Tj = 175 °C • Superior reliability • Low

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安世安世半导体(中国)有限公司

N-channel 100 V, 37.6 mOhm, standard level MOSFET in LFPAK56D using TrenchMOS technology

Dual standard level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) package using TrenchMOS technology. • High peak drain current IDM\n• Copper clip and flexible Leads\n• High operating junction temperature Tj = 175 °C\n• Superior reliability\n• Low body diode reverse recovery charge Qr;

Nexperia

安世

N-channel enhancement mode field-effect transistor

Description SiliconMAX™1 products use the latest Philips TrenchMOS™2 technology to achieve the lowest possible on-state resistance in a SOT96-1 (SO8) package. Product availability: PSMN038-100K in SOT96-1 (SO8) Features ■ Very low on-state resistance ■ Fast switching ■ TrenchMOS™ technol

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PHI

飞利浦

N-Channel 100 V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • Extremely Low Qgd for Switching Losses • 100 Rg Tested • 100 Avalanche Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Primary Side Switch

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VBSEMI

微碧半导体