PSMN038-100K

N-channel enhancement mode field-effect transistor

Description SiliconMAX™1productsusethelatestPhilipsTrenchMOS™2technologytoachievethelowestpossibleon-stateresistanceinaSOT96-1(SO8)package. Productavailability: PSMN038-100KinSOT96-1(SO8) Features ■Verylowon-stateresistance ■Fastswitching ■TrenchMOS™technol

PSMN038-100K

N-channel TrenchMOS SiliconMAX standard level FET

Generaldescription SiliconMAXstandardlevelN-channelenhancementmodeField-EffectTransistor(FET)inaplasticpackageusingTrenchMOStechnology.Thisproductisdesignedandqualifiedforuseincomputing,communications,consumerandindustrialapplicationsonly. Featuresandbenefits ■

PSMN038-100K

N-Channel 100 V (D-S) MOSFET

FEATURES •Halogen-freeAccordingtoIEC61249-2-21 Definition •ExtremelyLowQgdforSwitchingLosses •100RgTested •100AvalancheTested •ComplianttoRoHSDirective2002/95/EC APPLICATIONS •PrimarySideSwitch

PSMN038-100K

N-channel TrenchMOS SiliconMAX standard level FET

1.1Generaldescription SiliconMAXstandardlevelN-channelenhancementmodeField-EffectTransistor(FET)in aplasticpackageusingTrenchMOStechnology.Thisproductisdesignedandqualifiedfor useincomputing,communications,consumerandindustrialapplicationsonly. 1.2Featuresandb

PSMN038-100HS

N-channel100V,37.6mOhm,standardlevelMOSFETinLFPAK56DusingTrenchMOStechnology

Generaldescription DualstandardlevelN-channelMOSFETinanLFPAK56D(DualPower-SO8)packageusing TrenchMOStechnology. Featuresandbenefits •HighpeakdraincurrentIDM •CopperclipandflexibleLeads •HighoperatingjunctiontemperatureTj=175°C •Superiorreliability •Low

PSMN038-100YL

N-channel100V37.5m廓logiclevelMOSFETinLFPAK56