丝印：28RS10H；Package：LFPAK56D；N-channel 100 V, 27.5 mOhm, standard level MOSFET in LFPAK56D using TrenchMOS technology

General description Dual standard level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) package using TrenchMOS technology. Features and benefits • High peak drain current IDM • Copper clip and flexible Leads • High operating junction temperature Tj = 175 °C • Superior reliability • Low

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N-channel LFPAK 100V 27.5 mΩ standard level MOSFET

1.1 General description Standard level N-channel MOSFET in LFPAK package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits Advanced TrenchMOS provides low RDSon and low gate cha

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丝印：028N10NS；Package：TOLL；100V N-Channel Enhancement Mode MOSFET

Feature  RDS(ON)

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N-channel LFPAK 100V 27.5 m廓 standard level MOSFET

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N-channel 100 V, 27.5 mOhm, standard level MOSFET in LFPAK56D using TrenchMOS technology

Dual standard level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) package using TrenchMOS technology. • High peak drain current IDM\n• Copper clip and flexible Leads\n• High operating junction temperature Tj = 175 °C\n• Superior reliability\n• Low body diode reverse recovery charge Qr;

Nexperia

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N-channel LFPAK 100V 27.5 mΩ standard level MOSFET

Standard level N-channel MOSFET in LFPAK package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. • Advanced TrenchMOS provides low RDSon and low gate charge\n• High efficiency gains in switching power converters\n• Improved mechanical and thermal characteristics\n• LFPAK provides maximum power density in a Power SO8 package;

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100V N-Channel Enhancement Mode MOSFET

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