R6012ANJTL

N-Channel650V(D-S)MOSFET

FEATURES •Reducedtrr,Qrr,andIRRM •Lowfigure-of-merit(FOM)RonxQg •Lowinputcapacitance(Ciss) •LowswitchinglossesduetoreducedQrr •Ultralowgatecharge(Qg) •Avalancheenergyrated(UIS) APPLICATIONS •Telecommunications -Serverandtelecompowersupplies •Light

R6012ANX

Nch600V12APowerMOSFET

R6012ANX

10VDriveNchMOSFET

Features 1)Lowon-resistance. 2)Fastswitchingspeed. 3)Gate-sourcevoltage(VGSS)guaranteedtobe±30V. 4)Drivecircuitscanbesimple. 5)Paralleluseiseasy. 6)Pb-freeleadplating;RoHScompliant Application SwitchingPowerSupply

R6012FNX

10VDriveNchMOSFET

Features 1)Fastreverserecoverytime(trr). 2)Lowon-resistance. 3)Fastswitchingspeed. 4)Gate-sourcevoltage(VGSS)guaranteedtobe30V. 5)Drivecircuitscanbesimple. 6)Paralleluseiseasy. 7)Pb-freeleadplating;RoHScompliant Application SwitchingPowerSupply

R6012FNX

N-ChannelMOSFETusesadvancedtrenchtechnology

R6012JNJ

Nch600V12APowerMOSFET

Features 1)Fastreverserecoverytime(trr) 2)Lowon-resistance 3)Fastswitchingspeed 4)Drivecircuitscanbesimple 5)Pb-freeplating;RoHScompliant Application Switchingapplications

R6012JNX

Nch600V12APowerMOSFET

Features 1)Fastreverserecoverytime(trr) 2)Lowon-resistance 3)Fastswitchingspeed 4)Drivecircuitscanbesimple 5)Pb-freeplating;RoHScompliant Application Switchingapplications

RFOS6012

GaAsOpticalReceiver45MHzto1200MHz

RJK6012DPE

SiliconNChannelMOSFETHighSpeedPowerSwitching

Features •Lowon-resistance RDS(on)=0.77Ωtyp.(atID=5A,VGS=10V,Ta=25°C) •Lowleakagecurrent •Highspeedswitching

RJK6012DPP

SiliconNChannelMOSFETHighSpeedPowerSwitching

Features •Lowon-resistance RDS(on)=0.77Ωtyp.(atID=5A,VGS=10V,Ta=25°C) •Lowleakagecurrent •Highspeedswitching