| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
N-Channel650V(D-S)PowerMOSFET | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
N-ChannelPowerMOSFET | JIANGSU Jiangsu Changjiang Electronics Technology Co., Ltd | JIANGSU | ||
N-ChannelPowerMOSFET | ZPSEMI ZP Semiconductor | ZPSEMI | ||
Plastic-EncapsulateMOSFETS | ZPSEMI ZP Semiconductor | ZPSEMI | ||
N-ChannelPowerMOSFET | JIANGSU Jiangsu Changjiang Electronics Technology Co., Ltd | JIANGSU | ||
POWERFIELDEFFECTTRANSISTOR [ChampionMicroelectronicCorporation] GENERALDESCRIPTION ThishighvoltageMOSFETusesanadvancedterminationschemetoprovideenhancedvoltage-blockingcapabilitywithoutdegradingperformanceovertime.Inaddition,thisadvancedMOSFETisdesignedtowithstandhighenergyinavalanc | ETCList of Unclassifed Manufacturers 未分类制造商 | ETC | ||
N-ChannelEnhancement InPowerProductLines | ETC1List of Unclassifed Manufacturers etc未分类制造商未分类制造商 | ETC1 | ||
N-ChannelEnhancement InPowerProductLines | ETC1List of Unclassifed Manufacturers etc未分类制造商未分类制造商 | ETC1 | ||
N-ChannelPowerFieldEffectTransistor Description ThishighvoltageMOSFETusesanadvancedterminationschemetoprovideenhancedvoltage-blockingcapabilitywithoutdegratdingperformanceovertime.Inaddition,thisadvancedMOSFETisdesignedtowithstandhighenergyinavalancheandcommutationmodes.Thenewenergyefficient | HSMC 华昕 | HSMC | ||
N-ChannelPowerFieldEffectTransistor Description ThishighvoltageMOSFETusesanadvancedterminationschemetoprovideenhancedvoltage-blockingcapabilitywithoutdegratdingperformanceovertime.Inaddition,thisadvancedMOSFETisdesignedtowithstandhighenergyinavalancheandcommutationmodes.Thenewenergyefficient | HSMC 华昕 | HSMC | ||
N-ChannelPowerFieldEffectTransistor Description ThishighvoltageMOSFETusesanadvancedterminationschemetoprovideenhancedvoltage-blockingcapabilitywithoutdegratdingperformanceovertime.Inaddition,thisadvancedMOSFETisdesignedtowithstandhighenergyinavalancheandcommutationmodes.Thenewenergyefficient | HSMC 华昕 | HSMC | ||
N-ChannelMOSFETTransistor •DESCRIPTION •Ultralowgatecharge •Highpeakcurrentcapability •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤0.7Ω •Enhancementmode •FastSwitchingSpeed •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
iscN-ChannelMOSFETTransistor •DESCRITION •Highpeakcurrentcapability •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤700mΩ •Enhancementmode: •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
600VSiliconN-ChannelPowerMOSFET | ||||
600VSiliconN-ChannelPowerMOSFET | ||||
600VSuperJunctionPowerMOSFET | ||||
CoolMOSTMPowerTransistorFeaturesIntrinsicfast-recoverybodydiode Features •Intrinsicfast-recoverybodydiode •Extremelylowreverserecoverycharge •Ultralowgatecharge •Extremedv/dtrated •Highpeakcurrentcapability •QualifiedaccordingtoJEDEC1)fortargetapplications CoolMOSCFDdesignedfor: •SoftswitchingPWMStages •LCD&CR | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
IscN-ChannelMOSFETTransistor •FEATURES •WithTO-220Fpackage •Lowinputcapacitanceandgatecharge •Lowgateinputresistance •Reducedswitchingandconductionlosses •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation •APPLICATIONS •Switchingapplication | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
N-Channel650V(D-S)PowerMOSFET FEATURES •Lowfigure-of-merit(FOM)RonxQg •Lowinputcapacitance(Ciss) •Reducedswitchingandconductionlosses •Ultralowgatecharge(Qg) •Avalancheenergyrated(UIS) APPLICATIONS •Serverandtelecompowersupplies •Switchmodepowersupplies(SMPS) •Powerfactorcorrection | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
CoolMOSTMPowerTransistorFeaturesIntrinsicfast-recoverybodydiode Features •Intrinsicfast-recoverybodydiode •Extremelylowreverserecoverycharge •Ultralowgatecharge •Extremedv/dtrated •Highpeakcurrentcapability •QualifiedforindustrialgradeapplicationsaccordingtoJEDEC1) CoolMOSCFDdesignedfor: •SoftswitchingPWMStages •LC | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon |
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
PIP |
2021+ |
TO-252 |
9000 |
原装现货,随时欢迎询价 |
询价 | ||
IPS |
1926+ |
to-252 |
6852 |
只做原装正品现货!或订货假一赔十! |
询价 | ||
PIP |
21+ |
TO-252 |
600 |
原装现货假一赔十 |
询价 | ||
PIP |
21+ |
TO-252 |
6000 |
原装正品 |
询价 | ||
PIP |
23+ |
TO-252 |
600 |
询价 | |||
PIP |
2023+ |
TO-252 |
6895 |
原厂全新正品旗舰店优势现货 |
询价 | ||
PIP |
589220 |
16余年资质 绝对原盒原盘 更多数量 |
询价 | ||||
PIP |
23+ |
TO-252 |
89630 |
当天发货全新原装现货 |
询价 | ||
PIP |
23+ |
NA/ |
600 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
询价 | ||
PIP(丽隽) |
2112+ |
TO-252 |
105000 |
2500个/圆盘一级代理专营品牌!原装正品,优势现货, |
询价 |
相关规格书
更多- PSD311-20J
- PSD311-A-20L
- PSD312-B-15J
- PSD312-B-70J
- PSD813F2A-90J
- PSD834F2-90JI
- PSD934F2-90J
- PSK30303
- PST532A
- PST572DMT
- PST600DMT
- PST9120NR
- PST9137NR
- PST9145NR
- PT2213
- PT2221-002
- PT2222-002
- PT2243-S
- PT2249A
- PT2253
- PT2254A
- PT2256-S
- PT2257-S
- PT2260-R4S
- PT2262-S
- PT2268
- PT2272
- PT2272-M4
- PT2272-M6
- PT2308
- PT2313L
- PT2315
- PT2322-S
- PT2387
- PT2389
- PT2398
- PT2399S
- PT25B006G
- PT4171S
- PT5101N
- PT6101N
- PT6312
- PT6312LQ
- PT6315
- PT6931A
相关库存
更多- PSD311-A-20J
- PSD311-B-15J
- PSD312-B-20J
- PSD4235G2-90UI
- PSD813F2A-90JI
- PSD913F2-15J
- PSK30302
- PST529DMT
- PST572CMT
- PST572EMT
- PST600DMT-R
- PST9128NR
- PST9142NR
- PT2210
- PT2221-001
- PT2222-001
- PT2240P-S
- PT2248
- PT2250A
- PT2253A
- PT2256
- PT2257
- PT2258
- PT2262
- PT2265
- PT2268P8
- PT2272-L4
- PT2272-M4S
- PT2275
- PT2308-S
- PT2314
- PT2322
- PT2381
- PT2388
- PT2395
- PT2399
- PT2461-103
- PT28C020-90
- PT5101C
- PT5107N
- PT6311
- PT6312BLQ
- PT6313-S
- PT6315-S
- PT6931C
