CoolMOSTM Power Transistor Features Intrinsic fast-recovery body diode

Features • Intrinsic fast-recovery body diode • Extremely low reverse recovery charge • Ultra low gate charge • Extreme dv /dt rated • High peak current capability • Qualified for industrial grade applications according to JEDEC1) CoolMOS CFD designed for: • Soft switching PWM Stages • LC

文件：340.77 Kbytes 页数：12 Pages

Infineon

英飞凌

N-Channel MOSFET Transistor

• DESCRIPTION • Ultra low gate charge • High peak current capability • FEATURES • Static drain-source on-resistance: RDS(on) ≤0.7Ω • Enhancement mode • Fast Switching Speed • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

文件：338.65 Kbytes 页数：2 Pages

ISC

无锡固电

N-Channel 650V (D-S) Power MOSFET

FEATURES • Low figure-of-merit (FOM) Ron x Qg • Low input capacitance (Ciss) • Reduced switching and conduction losses • Ultra low gate charge (Qg) • Avalanche energy rated (UIS) APPLICATIONS • Server and telecom power supplies • Switch mode power supplies (SMPS) • Power factor correction

文件：1.1083 Mbytes 页数：10 Pages

VBSEMI

微碧半导体

500V-900V CoolMOS™ N-Channel Power MOSFET

CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. 600V CoolMOS™ CFD series combines the experience of the leading SJ MOSFET supplier with high class innovation. \n CoolMOS™ CFD2 is rep ·Fourth series of CoolMOS™ market entry in 2004\n ·Fast Body Diode, Q rr 1/10th of C3 series, V th 4 V, g fs high, R g low\n ·Specific for phase-shift ZVS and DC-AC power applications;

Infineon

英飞凌