STEERING DIODE ARRAY

FEATURES ✔ 500 Milliwatt Continuous Power Dissipation ✔ ESD Protection > 40 kilovolts ✔ Low Insertion Loss & Cross-Talk ✔ Provides Protection for 8 I/O Lines ✔ Working Voltage > 50 Volts ✔ Low Leakage Current

文件：78.75 Kbytes 页数：4 Pages

PROTEC

STEERING DIODE ARRAY

FEATURES ✔ 500 Milliwatt Continuous Power Dissipation ✔ ESD Protection > 40 kilovolts ✔ Low Insertion Loss & Cross-Talk ✔ Provides Protection for 8 I/O Lines ✔ Working Voltage > 50 Volts ✔ Low Leakage Current

文件：78.75 Kbytes 页数：4 Pages

PROTEC

STEERING DIODE ARRAY

FEATURES ✔ 500 Milliwatt Continuous Power Dissipation ✔ ESD Protection > 40 kilovolts ✔ Low Insertion Loss & Cross-Talk ✔ Provides Protection for 8 I/O Lines ✔ Working Voltage > 50 Volts ✔ Low Leakage Current

文件：78.75 Kbytes 页数：4 Pages

PROTEC

NPN BISS transistor

DESCRIPTION NPN BISS (Breakthrough In Small Signal) transistor in a SOT23 plastic package. PNP complement: PMMT591A. FEATURES • High current (max. 1 A) • Low collector-emitter saturation voltage ensures reduced power consumption. APPLICATIONS • Battery powered units where high current and lo

文件：42.57 Kbytes 页数：8 Pages

PHI

飞利浦

NPN BISS transistor

DESCRIPTION NPN BISS (Breakthrough In Small Signal) transistor in a SOT23 plastic package. PNP complement: PMMT591A. FEATURES • High current (max. 1 A) • Low collector-emitter saturation voltage ensures reduced power consumption. APPLICATIONS • Battery powered units where high current and lo

文件：42.57 Kbytes 页数：8 Pages

PHI

飞利浦

丝印：9A；Package：SOT23；NPN BISS transistor

FEATURES •High current (max. 1 A) •Low collector-emitter saturation voltage ensures reduced power consumption. APPLICATIONS •Battery powered units where high current and low power consumption are important. DESCRIPTION NPN BISS (Breakthrough In Small Signal) transistor in a SOT23 plastic pac

文件：426.17 Kbytes 页数：8 Pages

NEXPERIA

安世

PNP BISS transistor

DESCRIPTION PNP BISS (Breakthrough In Small Signal) transistor in a SOT23 plastic package. NPN complement: PMMT491A. FEATURES • High current (max. 1 A) • Low collector-emitter saturation voltage ensures reduced power consumption. APPLICATIONS • Battery powered units where high current and lo

文件：42.68 Kbytes 页数：8 Pages

PHI

飞利浦

PNP BISS transistor

DESCRIPTION PNP BISS (Breakthrough In Small Signal) transistor in a SOT23 plastic package. NPN complement: PMMT491A. FEATURES • High current (max. 1 A) • Low collector-emitter saturation voltage ensures reduced power consumption. APPLICATIONS • Battery powered units where high current and lo

文件：42.68 Kbytes 页数：8 Pages

PHI

飞利浦

丝印：9B；Package：SOT23；PNP BISS transistor

FEATURES •High current (max. 1 A) •Low collector-emitter saturation voltage ensures reduced power consumption. APPLICATIONS •Battery powered units where high current and low power consumption are important. DESCRIPTION PNP BISS (Breakthrough In Small Signal) transistor in a SOT23 plastic

文件：317.77 Kbytes 页数：8 Pages

NEXPERIA

安世

IEC Appliance Inlet C14 with Appliance Outlet F, Line Switch 2-pole and Voltage Selector

文件：411.66 Kbytes 页数：3 Pages

SCHURTER

硕特