丝印：9B；Package：DFN1412D-3；Schottky barrier diode

1. General description Planar Schottky barrier diode encapsulated in an ultra small DFN1412D-3 (SOT8009, JEDEC MO340-CA) leadless Surface-Mounted Device (SMD) plastic package with side-wettable flanks. 2. Features and benefits • Low forward voltage • Low capacitance • Leadless ultra small

文件：239.29 Kbytes 页数：12 Pages

NEXPERIA

安世

丝印：9B；Package：SOT23；PNP BISS transistor

FEATURES •High current (max. 1 A) •Low collector-emitter saturation voltage ensures reduced power consumption. APPLICATIONS •Battery powered units where high current and low power consumption are important. DESCRIPTION PNP BISS (Breakthrough In Small Signal) transistor in a SOT23 plastic

文件：317.77 Kbytes 页数：8 Pages

NEXPERIA

安世

丝印：9B；Package：MOLD；BIPOLAR ANALOG INTEGRATED CIRCUIT

FEATURES • Low voltage operation. VREF ≤ VOUT ≤ 24 V • High accuracy. VREF = 1.26 V ± 2.4 • Adjustable output voltage by two external resistors. • Pin compatible with μPC1093. (μPC1944)

文件：312.25 Kbytes 页数：13 Pages

RENESAS

瑞萨

丝印：9B；Package：MOLD；BIPOLAR ANALOG INTEGRATED CIRCUIT

FEATURES • Low voltage operation. VREF ≤ VOUT ≤ 24 V • High accuracy. VREF = 1.26 V ± 2.4 • Adjustable output voltage by two external resistors. • Pin compatible with μPC1093. (μPC1944)

文件：312.25 Kbytes 页数：13 Pages

RENESAS

瑞萨

丝印：9B；Package：X2SON；300-mA, Low-Dropout Regulator

文件：874.38 Kbytes 页数：29 Pages

TI

德州仪器

丝印：9B；Package：SOD-323FL；Zener Diode

文件：1.63054 Mbytes 页数：9 Pages

ROHM

罗姆

丝印：9B；Package：SOD-323FL；Zener Diode

文件：1.6984 Mbytes 页数：9 Pages

ROHM

罗姆

丝印：9B；Package：SOD-323FL；Zener Diode

文件：1.7149 Mbytes 页数：9 Pages

ROHM

罗姆

丝印：9B；Package：SOD-323FL；Zener Diode

文件：1.65846 Mbytes 页数：9 Pages

ROHM

罗姆

丝印：9B；Package：SOD-323FL；Zener Diode

文件：1.62118 Mbytes 页数：9 Pages

ROHM

罗姆