丝印：LG；Package：CFP3；150 V, 1 A Silicon Germanium (SiGe) rectifier

Features • Low forward voltage and low Qrr • Extremely low leakage current • Thermal stability up to 175 °C junction temperature • Fast and smooth switching • Low parasitic capacitance • AEC-Q101 qualified Benefits • Excellent efficiency • Extraordinary safe operating area • Minimal im

文件：258.579 Kbytes 页数：14 Pages

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丝印：LG；Package：CFP3；150 V, 1 A Silicon Germanium (SiGe) rectifier

1. General description Silicon Germanium (SiGe) rectifier encapsulated in a CFP3 (SOD123W) small and flat lead Surface-Mounted Device (SMD) plastic package. 2. Features and benefits Features Benefits • Low forward voltage and low Qrr • Extremely low leakage current • Thermal stability up to

文件：258.88 Kbytes 页数：14 Pages

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丝印：EA；Package：CFP5；150 V, 2 A Silicon Germanium (SiGe) rectifier

Features • Low forward voltage and low Qrr • Extremely low leakage current • Thermal stability up to 175 °C junction temperature • Fast and smooth switching • Low parasitic capacitance • AEC-Q101 qualified Benefits • Excellent efficiency • Extraordinary safe operating area • Minimal im

文件：250.96 Kbytes 页数：14 Pages

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丝印：EA；Package：CFP5；150 V, 2 A Silicon Germanium (SiGe) rectifier

1. General description Silicon Germanium (SiGe) rectifier encapsulated in a CFP5 (SOD128) small and flat lead Surface- Mounted Device (SMD) plastic package. 2. Features and benefits Features Benefits • Low forward voltage and low Qrr • Extremely low leakage current • Thermal stability up to

文件：252.42 Kbytes 页数：14 Pages

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丝印：LH；Package：CFP3；150 V, 2 A Silicon Germanium (SiGe) rectifier

Features • Low forward voltage and low Qrr • Extremely low leakage current • Thermal stability up to 175 °C junction temperature • Fast and smooth switching • Low parasitic capacitance • AEC-Q101 qualified Benefits • Excellent efficiency • Extraordinary safe operating area • Minimal im

文件：257.39 Kbytes 页数：14 Pages

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丝印：LH；Package：CFP3；150 V, 2 A Silicon Germanium (SiGe) rectifier

1. General description Silicon Germanium (SiGe) rectifier encapsulated in a CFP3 (SOD123W) small and flat lead Surface-Mounted Device (SMD) plastic package. 2. Features and benefits Features Benefits • Low forward voltage and low Qrr • Extremely low leakage current • Thermal stability up to

文件：258.62 Kbytes 页数：14 Pages

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丝印：EB；Package：CFP5；150 V, 3 A Silicon Germanium (SiGe) rectifier

Features • Low forward voltage and low Qrr • Extremely low leakage current • Thermal stability up to 175 °C junction temperature • Fast and smooth switching • Low parasitic capacitance • AEC-Q101 qualified Benefits • Excellent efficiency • Extraordinary safe operating area • Minimal im

文件：252.09 Kbytes 页数：14 Pages

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丝印：EB；Package：CFP5；150 V, 3 A Silicon Germanium (SiGe) rectifier

1. General description Silicon Germanium (SiGe) rectifier encapsulated in a CFP5 (SOD128) small and flat lead Surface- Mounted Device (SMD) plastic package. 2. Features and benefits Features Benefits • Low forward voltage and low Qrr • Extremely low leakage current • Thermal stability up

文件：253.56 Kbytes 页数：14 Pages

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丝印：E5；Package：SOD323；20 V, 0.5 A very low VF Schottky barrier rectifier

1. General description Schottky barrier rectifier with an integrated guard ring for stress protection, encapsulated in a SOD323 (SC-76) very small Surface-Mounted Device (SMD) plastic package. 2. Features and benefits • Very low forward voltage • High surge current • Very small plastic SMD

文件：214.78 Kbytes 页数：8 Pages

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Schottky barrier rectifiers

FEATURES ◇ Very low forward voltage ◇ High surge current ◇ Very small plastic SMD package. APPLICATIONS ◇ Low voltage rectification ◇ High efficiency DC/DC conversion ◇ Voltage clamping ◇ Inverse polarity protection ◇ Low power consumption applications.

文件：101.66 Kbytes 页数：5 Pages

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