丝印：1000；Package：DFN1608D-2；20 V, 0.5 A low VF MEGA Schottky barrier rectifier

1.1 General description Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with an integrated guard ring for stress protection, encapsulated in a leadless ultra small SOD1608 (DFN1608D-2) Surface-Mounted Device (SMD) plastic package with visible and solderable side

文件：1.21746 Mbytes 页数：15 Pages

NEXPERIA

安世

丝印：P3；Package：SOT23；0.5 A very low VF MEGA Schottky barrier rectifiers in SOT23 package

Features * Forward current: 0.5 A * Very low forward voltage * Small SMD plastic package

文件：720.84 Kbytes 页数：12 Pages

NEXPERIA

安世

丝印：P3；Package：SOT23；20 V, 0.5 A very low VF MEGA Schottky barrier rectifier

1. General description Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with an integrated guard ring for stress protection, encapsulated in a SOT23 small Surface Mounted Device (SMD) plastic package. 2. Features and benefits • Forward current: 0.5 A • Very l

文件：196.02 Kbytes 页数：9 Pages

NEXPERIA

安世

丝印：LJ；Package：CFP3；200 V, 1 A Silicon Germanium (SiGe) rectifier

Features • Low forward voltage and low Qrr • Extremely low leakage current • Thermal stability up to 175 °C junction temperature • Fast and smooth switching • Low parasitic capacitance • AEC-Q101 qualified Benefits • Excellent efficiency • Extraordinary safe operating area • Minimal im

文件：256.66 Kbytes 页数：14 Pages

NEXPERIA

安世

丝印：LJ；Package：CFP3；200 V, 1 A Silicon Germanium (SiGe) rectifier

1. General description Silicon Germanium (SiGe) rectifier encapsulated in a CFP3 (SOD123W) small and flat lead Surface-Mounted Device (SMD) plastic package. 2. Features and benefits Features Benefits • Low forward voltage and low Qrr • Extremely low leakage current • Thermal stability up to

文件：257.86 Kbytes 页数：14 Pages

NEXPERIA

安世

200 V, 1 A Silicon Germanium (SiGe) rectifier

1. General description Silicon Germanium (SiGe) rectifier encapsulated in a CFP3 (SOD123W) small and flat lead Surface-Mounted Device (SMD) plastic package. 2. Features and benefits Features • Low forward voltage and low Qrr • Extremely low leakage current • Thermal stability up to 175 °C

文件：258.13 Kbytes 页数：14 Pages

NEXPERIA

安世

200 V, 1 A Silicon Germanium (SiGe) rectifier

1. General description Silicon Germanium (SiGe) rectifier encapsulated in a CFP3 (SOD123W) small and flat lead Surface-Mounted Device (SMD) plastic package. 2. Features and benefits Features • Low forward voltage and low Qrr • Extremely low leakage current • Thermal stability up to 175 °C

文件：258.13 Kbytes 页数：14 Pages

NEXPERIA

安世

丝印：EC；Package：CFP5；200 V, 2 A Silicon Germanium (SiGe) rectifier

Features • Low forward voltage and low Qrr • Extremely low leakage current • Thermal stability up to 175 °C junction temperature • Fast and smooth switching • Low parasitic capacitance • AEC-Q101 qualified Benefits • Excellent efficiency • Extraordinary safe operating area • Minimal im

文件：250.38 Kbytes 页数：14 Pages

NEXPERIA

安世

丝印：EC；Package：CFP5；200 V, 2 A Silicon Germanium (SiGe) rectifier

1. General description Silicon Germanium (SiGe) rectifier encapsulated in a CFP5 (SOD128) small and flat lead Surface- Mounted Device (SMD) plastic package. 2. Features and benefits Features Benefits • Low forward voltage and low Qrr • Extremely low leakage current • Thermal stability up to

文件：251.86 Kbytes 页数：14 Pages

NEXPERIA

安世

丝印：LK；Package：CFP3；200 V, 2 A Silicon Germanium (SiGe) rectifier

Features • Low forward voltage and low Qrr • Extremely low leakage current • Thermal stability up to 175 °C junction temperature • Fast and smooth switching • Low parasitic capacitance • AEC-Q101 qualified Benefits • Excellent efficiency • Extraordinary safe operating area • Minimal im

文件：256.519 Kbytes 页数：14 Pages

NEXPERIA

安世