丝印：B5；Package：CFP3；1 A low VF MEGA Schottky barrier rectifier

1. General description Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with an integrated guard ring for stress protection, encapsulated in a SOD123W small and flat lead Surface-Mounted Device (SMD) plastic package. 2. Features and benefits • Average forward

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Low Forward Volatge Drop Schottky Barrier Diodes

Features « Super Low Forward Voltage Drop « High Current Capability, High Efficiency «High Junction Temperature Capability o Low Leakage Current ® RoHs Product

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丝印：AU；Package：SOT23；1 A very low VF MEGA Schottky barrier rectifiers

1.1 General description Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifiers with an integrated guard ring for stress protection, encapsulated in small Surface-Mounted Device (SMD) plastic packages. 1.2 Features n Forward current: IF £ 1 A n Reverse voltage: VR £

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丝印：F1；Package：SOT666；Low VF MEGA Schottky barrier diode

FEATURES •Forward current: 1 A •Reverse voltage: 20 V •Very low forward voltage •Ultra small SMD package •Flat leads: excellent coplanarity and improved thermal behaviour. APPLICATIONS •Low voltage rectification •High efficiency DC/DC conversion •Switch mode power supply •Inverse polar

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Low VF (MEGA) Schottky barrier diode

FEATURES •Forward current: 1.5 A •Reverse voltage: 20 V •Ultra high-speed switching •Very low forward voltage •Very small plastic SMD package. APPLICATIONS •Ultra high-speed switching •Voltage clamping •Protection circuits. DESCRIPTION Planar Maximum Efficiency General Application (MEGA

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丝印：AD；Package：SOD123F；20 V, 1.5 A very low VF MEGA Schottky barrier rectifiers

1.1 General description Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifiers with an integrated guard ring for stress protection encapsulated in small and flat SMD plastic packages. 1.2 Features Forward current: ≤ 1.5 A Reverse voltage: ≤ 20 V Very low forward

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丝印：EL；Package：SOD323F；20 V, 1.5 A very low VF MEGA Schottky barrier rectifiers

1.1 General description Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifiers with an integrated guard ring for stress protection encapsulated in small and flat SMD plastic packages. 1.2 Features Forward current: ≤ 1.5 A Reverse voltage: ≤ 20 V Very low forward

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丝印：F5；Package：SOT666；20 V, 1.5 A low VF Schottky barrier diode

1. General description Planar Schottky barrier diode with an integrated guard ring for stress protection, encapsulated in a SOT666 ultra small Surface-Mounted Device (SMD) plastic package. 2. Features and benefits • Forward current: 1.5 A • Reverse voltage: 20 V • Very low forward voltage

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丝印：S3；Package：SOD323；20 V, 2 A very low VF MEGA Schottky barrier rectifier in SOD323 (SC-76) package

1. General description Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with an integrated guard ring for stress protection, encapsulated in a SOD323 (SC-76) very small SMD plastic package. 2. Features and benefits • Forward current: 2 A • Reverse voltage: 20

文件：190.16 Kbytes 页数：8 Pages

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丝印：AL；Package：HUSON3；2 A low VF dual MEGA Schottky barrier rectifier

Features and benefits * Average forward current: IF(AV) ≤ 2 A * Reverse voltage: VR ≤ 20 V * Low forward voltage * Exposed heat sink (cathode pad) for excellent thermal and electrical conductivity * Leadless small SMD plastic package with medium power capability * AEC-Q101 qualified

文件：432.95 Kbytes 页数：16 Pages

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