| 型号 | 下载 订购 | 功能描述 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
丝印:100V;Package:CFP15B;100 V, 6 A low leakage current Schottky barrier rectifier 1. General description Low leakage current Schottky barrier rectifier encapsulated in a CFP15B (SOT1289B) power and flat lead Surface-Mounted Device (SMD) plastic package. 2. Features and benefits • Low forward voltage • Low leakage current • High thermal stability and large Safe Operation 文件:270.4 Kbytes 页数:13 Pages | NEXPERIA 安世 | NEXPERIA | ||
丝印:100VL08E;Package:CFP15B;100 V, 8 A low leakage current Schottky barrier rectifier 1. General description Low leakage current Schottky barrier rectifier encapsulated in a CFP15B (SOT1289B) power and flat lead Surface-Mounted Device (SMD) plastic package. 2. Features and benefits • Low forward voltage • Low leakage current • High thermal stability and large Safe Operation 文件:270.35 Kbytes 页数:12 Pages | NEXPERIA 安世 | NEXPERIA | ||
丝印:100V;Package:CFP15B;100 V, 8 A low leakage current Schottky barrier rectifier 1. General description Low leakage current Schottky barrier rectifier encapsulated in a CFP15B (SOT1289B) power and flat lead Surface-Mounted Device (SMD) plastic package. 2. Features and benefits • Low forward voltage • Low leakage current • High thermal stability and large Safe Operation 文件:269.86 Kbytes 页数:12 Pages | NEXPERIA 安世 | NEXPERIA | ||
丝印:100VL10E;Package:CFP15B;100 V, 10 A low leakage current Schottky barrier rectifier 1. General description Low leakage current Schottky barrier rectifier encapsulated in a CFP15B (SOT1289B) power and flat lead Surface-Mounted Device (SMD) plastic package. 2. Features and benefits • Low forward voltage • Low leakage current • High thermal stability and large Safe Operation 文件:272.92 Kbytes 页数:12 Pages | NEXPERIA 安世 | NEXPERIA | ||
丝印:100V;Package:CFP15B;100 V, 10 A low leakage current Schottky barrier rectifier 1. General description Low leakage current Schottky barrier rectifier encapsulated in a CFP15B (SOT1289B) power and flat lead Surface-Mounted Device (SMD) plastic package. 2. Features and benefits • Low forward voltage • Low leakage current • High thermal stability and large Safe Operation 文件:272.48 Kbytes 页数:12 Pages | NEXPERIA 安世 | NEXPERIA | ||
丝印:E2;Package:SOD323;2 A ultra low VF MEGA Schottky barrier rectifier 1.1 General description Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with an integrated guard ring for stress protection, encapsulated in SOD323 (SC-76) very small Surface-Mounted Device (SMD) plastic package. 1.2 Features n Forward current: IF £ 2 A n Reve 文件:180.18 Kbytes 页数:10 Pages | NEXPERIA 安世 | NEXPERIA | ||
2 A ultra low VF MEGA Schottky barrier rectifier General description Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with an integrated guard ring for stress protection, encapsulated in SOD323 (SC-76) very small Surface-Mounted Device (SMD) plastic package. Features Forward current: IF≤2A Reverse v 文件:65.16 Kbytes 页数:9 Pages | 恩XP | 恩XP | ||
Ultra low VFMEGA Schottky barrier diode DESCRIPTION Planar Maximum Efficiency General Application (MEGA) Schottky barrier diode with an integrated guard ring for stress protection, encapsulated in a SOD323 (SC-76) very small SMD plastic package. FEATURES • Forward current: 2 A • Reverse voltage: 10 V • Ultra low forward 文件:54.1 Kbytes 页数:8 Pages | PHI 飞利浦 | PHI | ||
10 V, 2 A ultra low VF MEGA Schottky barrier rectifiers General description Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifiers with an integrated guard ring for stress protection, encapsulated in small and flat lead plastic SMD packages. Features ■ Forward current: ≤ 2 A ■ Reverse voltage: ≤ 10 V ■ Ultra low forward v 文件:56.86 Kbytes 页数:9 Pages | PHI 飞利浦 | PHI | ||
10 V, 2 A ultra low VF MEGA Schottky barrier rectifiers General description Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifiers with an integrated guard ring for stress protection, encapsulated in small and flat lead plastic SMD packages. Features ■ Forward current: ≤ 2 A ■ Reverse voltage: ≤ 10 V ■ Ultra low forward v 文件:113.54 Kbytes 页数:9 Pages | 恩XP | 恩XP |
技术参数
- ESD:
Y
- Vds(V):
100
- Vgs(±V):
20
- Id(A):
0.17
- Vgs(th)(typ V):
2
- Rds(on)(mΩ typ) @Vgs=10V:
4Ω
- Rds(on)(mΩ typ) @Vgs=4.5V:
4.3Ω
- Package:
SOT-23
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
PHI |
345 |
TO-220 |
1145 |
全新原装现货绝对自己公司特价库 |
询价 | ||
24+/25+ |
1 |
原装正品现货库存价优 |
询价 | ||||
恩XP |
24+ |
9000 |
询价 | ||||
KEMET |
三年内 |
1983 |
只做原装正品 |
询价 | |||
恩XP |
23+ |
SOD128 |
3200 |
询价 | |||
DISCRETE |
3000 |
PH3 |
114000 |
询价 | |||
VISHAY |
17+ |
SOD128 |
6200 |
100%原装正品现货 |
询价 | ||
恩XP |
25+ |
SOT666 |
2568 |
原装优势!绝对公司现货 |
询价 | ||
EVOXRIFA |
24+ |
12 |
原装现货,可开13%税票 |
询价 | |||
恩XP |
19+ |
SOD1608 |
16200 |
原装正品,现货特价 |
询价 |
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