10V, 3 A ULTRA LOW V-f MEGA SCHOTTKY BARRIER RECTIFIERS

General description Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifiers with an integrated guard ring for stress protection encapsulated in small SMD plastic packages. Features ■ Forward current: 3 A ■ Reverse voltage: 10 V ■ Ultra low forward voltage ■ Small and

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PHI

飞利浦

丝印：E7；Package：SC-90；10 V, 3 A ultra low VF Schottky barrier rectifier

1. General description Planar Schottky barrier rectifier with an integrated guard ring for stress protection, encapsulated in a very small and flat lead SOD323F Surface-Mounted Device (SMD) plastic package. 2. Features and benefits • Forward current: 3 A • Reverse voltage: 10 V • Ultra low

文件：182.43 Kbytes 页数：8 Pages

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丝印：LE；Package：CFP3；120 V, 1 A Silicon Germanium (SiGe) rectifier

Features • Low forward voltage and low Qrr • Extremely low leakage current • Thermal stability up to 175 °C junction temperature • Fast and smooth switching • Low parasitic capacitance Benefits • Excellent efficiency • Extraordinary safe operating area • Minimal impact on Electro-Magnet

文件：287.43 Kbytes 页数：14 Pages

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丝印：LE；Package：CFP3；120 V, 1 A Silicon Germanium (SiGe) rectifier

1. General description Silicon Germanium (SiGe) rectifier encapsulated in a CFP3 (SOD123W) small and flat lead Surface-Mounted Device (SMD) plastic package. 2. Features and benefits Features Benefits • Low forward voltage and low Qrr • Extremely low leakage current • Thermal stability up

文件：257.51 Kbytes 页数：14 Pages

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丝印：E8；Package：CFP5；120 V, 2 A Silicon Germanium (SiGe) rectifier

Features • Low forward voltage and low Qrr • Extremely low leakage current • Thermal stability up to 175 °C junction temperature • Fast and smooth switching • Low parasitic capacitance • AEC-Q101 qualified Benefits • Excellent efficiency • Extraordinary safe operating area • Minimal im

文件：250.42 Kbytes 页数：14 Pages

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丝印：E8；Package：CFP5；120 V, 2 A Silicon Germanium (SiGe) rectifier

1. General description Silicon Germanium (SiGe) rectifier encapsulated in a CFP5 (SOD128) small and flat lead Surface- Mounted Device (SMD) plastic package. 2. Features and benefits Features Benefits • Low forward voltage and low Qrr • Extremely low leakage current • Thermal stability up to

文件：251.91 Kbytes 页数：14 Pages

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丝印：LF；Package：CFP3；120 V, 2 A Silicon Germanium (SiGe) rectifier

Features • Low forward voltage and low Qrr • Extremely low leakage current • Thermal stability up to 175 °C junction temperature • Fast and smooth switching • Low parasitic capacitance • AEC-Q101 qualified Benefits • Excellent efficiency • Extraordinary safe operating area • Minimal im

文件：257.45 Kbytes 页数：14 Pages

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丝印：LF；Package：CFP3；120 V, 2 A Silicon Germanium (SiGe) rectifier

1. General description Silicon Germanium (SiGe) rectifier encapsulated in a CFP3 (SOD123W) small and flat lead Surface-Mounted Device (SMD) plastic package. 2. Features and benefits Features Benefits • Low forward voltage and low Qrr • Extremely low leakage current • Thermal stability up to

文件：257.76 Kbytes 页数：14 Pages

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丝印：E9；Package：CFP5；120 V, 3 A Silicon Germanium (SiGe) rectifier

Features • Low forward voltage and low Qrr • Extremely low leakage current • Thermal stability up to 175 °C junction temperature • Fast and smooth switching • Low parasitic capacitance • AEC-Q101 qualified Benefits • Excellent efficiency • Extraordinary safe operating area • Minimal im

文件：251.08 Kbytes 页数：14 Pages

NEXPERIA

安世

丝印：E9；Package：CFP5；120 V, 3 A Silicon Germanium (SiGe) rectifier

1. General description Silicon Germanium (SiGe) rectifier encapsulated in a CFP5 (SOD128) small and flat lead Surface- Mounted Device (SMD) plastic package. 2. Features and benefits Features Benefits • Low forward voltage and low Qrr • Extremely low leakage current • Thermal stability up to

文件：252.58 Kbytes 页数：14 Pages

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