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型号	下载订购	功能描述	制造商上传企业	LOGO
PM8111	文件：300 bytes Page：1 Pages	SAS Expanders (Discrete)	Microchip 微芯科技	Microchip
PM8112	文件：300 bytes Page：1 Pages	SAS Expanders (Discrete)	Microchip 微芯科技	Microchip
PM8113	文件：300 bytes Page：1 Pages	SAS Expanders (Discrete)	Microchip 微芯科技	Microchip
TC811CPL	文件：171.85 Kbytes Page：12 Pages	3-1/2 DIGIT A/D CONVERTER WITH HOLD AND DIFFERENTIAL REFERENCE INPUTS 文件：171.85 Kbytes 页数：12 Pages	TELCOM	TELCOM
UPA811	文件：49.15 Kbytes Page：6 Pages	HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC4228 SMALL MINI MOLD The µPA811T has built-in 2 low-voltage transistors which are designed to amplify low noise in the VHF band to the UHF band. FEATURES • Low Noise NF = 1.9 dB TYP. @ f = 2 GHz, VCE = 1 V, IC = 3 mA • High Gain \|S21e\|2 = 6.5 dB TYP. @ f = 2 GHz, VCE = 1 V, IC = 3 mA • A Small Mini Mold 文件：49.15 Kbytes 页数：6 Pages	NEC 瑞萨	NEC
UPA811T	文件：49.15 Kbytes Page：6 Pages	HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC4228 SMALL MINI MOLD The µPA811T has built-in 2 low-voltage transistors which are designed to amplify low noise in the VHF band to the UHF band. FEATURES • Low Noise NF = 1.9 dB TYP. @ f = 2 GHz, VCE = 1 V, IC = 3 mA • High Gain \|S21e\|2 = 6.5 dB TYP. @ f = 2 GHz, VCE = 1 V, IC = 3 mA • A Small Mini Mold 文件：49.15 Kbytes 页数：6 Pages	NEC 瑞萨	NEC

更多PM811供应商更新时间2026-10-24 11:46:00