N-channel enhancement mode field-effect transistor

Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™1 technology. Product availability: PHT4NQ10LT in SOT223. Features ■ TrenchMOS™ technology ■ Fast switching ■ Low on-state resistance ■ Surface mount package ■ Logic level compatible.

文件：347.09 Kbytes 页数：13 Pages

PHI

飞利浦

N-Channel 100-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFETs • 175 °C Maximum Junction Temperature • Compliant to RoHS Directive 2002/95/EC

文件：977.42 Kbytes 页数：6 Pages

VBSEMI

微碧半导体

丝印：4NQ10L；Package：SOT223；N-channel TrenchMOS logic level FET

1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications. 1.2 Features and benefits  Low cond

文件：440.58 Kbytes 页数：14 Pages

NEXPERIA

安世

N-channel TrenchMOS logic level FET

文件：184.03 Kbytes 页数：13 Pages

恩XP

N-channel TrenchMOS logic level FET

Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications.

Nexperia

安世

N-channel enhancement mode field-effect transistor

恩XP

N-channel TrenchMOS logic level FET

恩XP