TrenchMOS transistor Standard level FET

GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface mounting. Using ’trench’ technology the device features very low on-state resistance and has integral zener diodes giving ESDprotection. It is intended for use in DC

文件：75.34 Kbytes 页数：10 Pages

PHI

飞利浦

LOW PROFILE INTERFACE COUPLING AND HYBRID TRANSFORMERS

LOW PROFILE INTERFACE COUPLING AND HYBRID TRANSFORMERS

文件：240.72 Kbytes 页数：1 Pages

MICRO-ELECTRONICS

LOW PROFILE INTERFACE COUPLING AND HYBRID TRANSFORMERS

LOW PROFILE INTERFACE COUPLING AND HYBRID TRANSFORMERS

文件：240.72 Kbytes 页数：1 Pages

MICRO-ELECTRONICS

LOW PROFILE INTERFACE COUPLING AND HYBRID TRANSFORMERS

LOW PROFILE INTERFACE COUPLING AND HYBRID TRANSFORMERS

文件：240.72 Kbytes 页数：1 Pages

MICRO-ELECTRONICS

LOW PROFILE INTERFACE COUPLING AND HYBRID TRANSFORMERS

LOW PROFILE INTERFACE COUPLING AND HYBRID TRANSFORMERS

文件：240.72 Kbytes 页数：1 Pages

MICRO-ELECTRONICS

PowerMOS transistor

GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope suitable for surface mounting featuring high avalanche energy capability, stable blocking voltage, fast switching and high thermal cycling performance. Intended for use in Compact Fluorescent Lights

文件：27.58 Kbytes 页数：5 Pages

PHI

飞利浦

PowerMOS transistor

GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope suitable for surface mounting featuring high avalanche energy capability, stable blocking voltage, fast switching and high thermal cycling performance. Intended for use in Compact Fluorescent Lights

文件：30.34 Kbytes 页数：5 Pages

PHI

飞利浦

THYRISTOR MODULE 250A / 800V

FEATURES * Isolated Base * Single Thyristor Module * High Surge Capability * UL Recognized, File No. E187184 TYPICAL APPLICATIONS * Rectified For General Use

文件：282.25 Kbytes 页数：5 Pages

NIEC

THYRISTOR MODULE 250A / 800V

FEATURES * Isolated Base * Single Thyristor Module * High Surge Capability * UL Recognized, File No. E187184 TYPICAL APPLICATIONS * Rectified For General Use

文件：282.25 Kbytes 页数：5 Pages

NIEC

N-Channel 100-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFETs • 175 °C Maximum Junction Temperature • Compliant to RoHS Directive 2002/95/EC

文件：978.29 Kbytes 页数：6 Pages

VBSEMI

微碧半导体