SLIM BODY FLAT RIBBON IDC CABLES (2.54 mm) .100 PITCH

文件：532.96 Kbytes 页数：2 Pages

Samtec

美国申泰

High Stability - High Temperature (230 °C) Thin Film Wraparound Chip Resistors, Sulfur Resistant

文件：105.44 Kbytes 页数：6 Pages

VishayVishay Siliconix

威世科技

High Stability - High Temperature (230 °C) Thin Film Wraparound Chip Resistors, Sulfur Resistant

文件：97.17 Kbytes 页数：6 Pages

VishayVishay Siliconix

威世科技

丝印：PHT；Package：DO-214AB；5.0 To 440V 3000W Surface Mount Transient Voltage Suppressors (TVS)

Features For surface mounted applications in order to optimize board space Low leakage Uni and Bidirectional unit Glass passivated junction Low inductance Excellent clamping capability Typical IR less than 5μA above 9V 3000W Peak power capability at 10 × 1000μs waveform Repetition rate (d

文件：4.23189 Mbytes 页数：8 Pages

UNSEMI

优恩半导体

丝印：PHT；Package：DO-214AB；Transient Voltage Suppressor Diodes

Excellent clamping capability Low leakage current Low capacitance High surge capability Glass passivated chip Epoxy resin package Built-in strain relief Will not fatigue RoHS Compliant Fast response time: typically less than 1.0ps from 0 Volts to VBR min Features

文件：2.07246 Mbytes 页数：6 Pages

SAMYANG

三阳电子

丝印：PHT；Package：DO-214AB；Surface Mount Transient Voltage Suppressors (TVS)

文件：1.68763 Mbytes 页数：7 Pages

SOCAY

硕凯股份

TrenchMOS transistor Standard level FET

GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface mounting. Using ’trench’ technology the device features very low on-state resistance and has integral zener diodes giving ESDprotection. It is intended for use in DC

文件：75.34 Kbytes 页数：10 Pages

PHI

飞利浦

TrenchMOS transistor Logic level FET

GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface mounting. The device features very low on-state resistance and has integral zener diodes giving ESDprotection. It is intended for use in DC-DC converters and general

文件：69.16 Kbytes 页数：9 Pages

PHI

飞利浦

TrenchMOS transistor Logic level FET

GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface mounting. The device features very low on-state resistance and has integral zener diodes giving ESDprotection. It is intended for use in DC-DC converters and general

文件：69.16 Kbytes 页数：9 Pages

PHI

飞利浦

TrenchMOS transistor Standard level FET

GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface mounting. Using ’trench’ technology the device features very low on-state resistance and has integral zener diodes giving ESDprotection. It is intended for use in DC

文件：75.34 Kbytes 页数：10 Pages

PHI

飞利浦