PowerMOS transistor

GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope suitable for surface mounting featuring high avalanche energy capability, stable blocking voltage, fast switching and high thermal cycling performance. Intended for use in Compact Fluorescent Lights

文件：27.58 Kbytes 页数：5 Pages

PHI

飞利浦

PowerMOS transistor

恩XP

恩智浦

ZENER DIODES

1N52 SERIES ZENER DIODES 1N5221B Through 1N5272B ELECTRICAL CHARACTERISTICS (T A =25°C)unless otherwise noted.Based on dc measurements at thermal equillibrium;lead length=3/8”;thermal resistance of heat sink=30°C/W VFmax=1.1V @ I F=200mA for all types(T A = 25°C VFmax=1.1V@ I F=200mA)

文件：48.27 Kbytes 页数：2 Pages

LRC

乐山无线电

High stability and high reliability

Features • Low reverse leakage • Low zener impedance • Maximum power dissipation of 500 mW • High stability and high reliability • Lead and body according with RoHS standard

文件：121.29 Kbytes 页数：2 Pages

DACHANG

大昌电子

ZENER DIODES

FEATURE ♦ Low zener impedance ♦ Low regulation factor ♦ Glass passivated junction ♦ High temperature soldering guaranteed: 260 °C/10S/9.5mm lead length at 5 lbs tension

文件：316.83 Kbytes 页数：3 Pages

SY

顺烨电子