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PHT4NQ10T

N-channel enhancement mode field-effect transistor

Description N-channelenhancementmodefield-effecttransistorinaplasticpackageusingTrenchMOS™1technology. Features ■TrenchMOS™technology ■Veryfastswitching ■Surfacemountpackage. Applications ■PrimarysideswitchinDCtoDCconverters ■Highspeedlinedriver ■Fastgener

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

PHT4NQ10T

N-Channel 100-V (D-S) MOSFET

FEATURES •Halogen-freeAccordingtoIEC61249-2-21Definition •TrenchFET®PowerMOSFETs •175°CMaximumJunctionTemperature •ComplianttoRoHSDirective2002/95/EC

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体(台湾)有限公司

PHT4NQ10T

TrenchMOS™ standard level FET

1.Description N-channelenhancementmodefield-effecttransistorinaplasticpackageusing TrenchMOS™technology. Productavailability: PHT4NQ10TinSOT223. 2.Features nTrenchMOS™technology nVeryfastswitching nSurfacemountpackage. 3.Applications nPrimarysideswitchinDCto

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

PHK4NQ10T

N-channelTrenchMOStransistor

GENERALDESCRIPTION N-channelenhancementmodefield-effecttransistorinaplasticenvelopeusing’trench’technology. FEATURES •Lowon-stateresistance •Fastswitching •Lowprofilesurfacemountpackage Applications:- •Motorandrelaydrivers •d.c.tod.c.converters

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

PHK4NQ10T

N-Channel100V(D-S)MOSFET

FEATURES •Halogen-freeAccordingtoIEC61249-2-21 Definition •ExtremelyLowQgdforSwitchingLosses •100RgTested •100AvalancheTested •ComplianttoRoHSDirective2002/95/EC APPLICATIONS •PrimarySideSwitch

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体(台湾)有限公司

PHT4NQ10LT

N-channelTrenchMOSlogiclevelFET

1.1Generaldescription LogiclevelN-channelenhancementmodeField-EffectTransistor(FET)inaplastic packageusingTrenchMOStechnology.Thisproductisdesignedandqualifiedforusein computing,communications,consumerandindustrialapplications. 1.2Featuresandbenefits Lowcond

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

PHT4NQ10LT

N-channelenhancementmodefield-effecttransistor

Description N-channelenhancementmodefield-effecttransistorinaplasticpackageusingTrenchMOS™1technology. Productavailability: PHT4NQ10LTinSOT223. Features ■TrenchMOS™technology ■Fastswitching ■Lowon-stateresistance ■Surfacemountpackage ■Logiclevelcompatible.

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

PHT4NQ10LT

N-Channel100-V(D-S)MOSFET

FEATURES •Halogen-freeAccordingtoIEC61249-2-21Definition •TrenchFET®PowerMOSFETs •175°CMaximumJunctionTemperature •ComplianttoRoHSDirective2002/95/EC

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体(台湾)有限公司

详细参数

  • 型号:

    PHT4NQ10T

  • 制造商:

    NXP Semiconductors

  • 功能描述:

    MOSFET N CH 100V 3.5A SOT223

  • 功能描述:

    MOSFET, N CH, 100V, 3.5A, SOT223

  • 功能描述:

    MOSFET, N CH, 100V, 3.5A, SOT223; Transistor

  • Polarity:

    N Channel; Continuous Drain Current

  • Id:

    3.5A; Drain Source Voltage

  • Vds:

    100V; On Resistance

  • Rds(on):

    0.2ohm; Rds(on) Test Voltage

  • Vgs:

    10V; Threshold Voltage Vgs

  • Typ:

    3V; No. of

  • Pins:

    4;RoHS

  • Compliant:

    Yes

  • 功能描述:

    MOSFET N-Channel 100V 3.5A SOT223

供应商型号品牌批号封装库存备注价格
NXP(恩智浦)
23+
标准封装
19048
全新原装正品/价格优惠/质量保障
询价
NEXPERIA/安世
2019+
SOT-223
78550
原厂渠道 可含税出货
询价
NXP
20+
SOT223
3000
全新原装,价格优势
询价
PHILIPS/飞利浦
22+
SOT223
20000
只做原装进口 免费送样!!
询价
NXP(恩智浦)
22+
N/A
12000
一级代理,专注军工、汽车、医疗、工业、新能源、电力
询价
NEXPERIA/安世
20+
SOT-223
120000
原装正品 可含税交易
询价
NEXPERIA/安世
SOT223
7906200
询价
NXP恩智浦/PHILIPS飞利浦
2008++
SOT-223
6200
新进库存/原装
询价
NXP
2017+
SOT223
42588
深圳香港代理原装现货库存(美国-日本-台湾)可开正规增
询价
NXP
17+
SOT223
6200
100%原装正品现货
询价
更多PHT4NQ10T供应商 更新时间2024-4-30 14:33:00