N-channel enhancement mode field-effect transistor

Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™1 technology. Features ■ TrenchMOS™ technology ■ Very fast switching ■ Surface mount package. Applications ■ Primary side switch in DC to DC converters ■ High speed line driver ■ Fast gener

文件：351.57 Kbytes 页数：13 Pages

PHI

PHI

N-Channel 100-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFETs • 175 °C Maximum Junction Temperature • Compliant to RoHS Directive 2002/95/EC

文件：977.41 Kbytes 页数：6 Pages

VBSEMI

微碧半导体

TrenchMOS™ standard level FET

1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. Product availability: PHT4NQ10T in SOT223. 2. Features n TrenchMOS™ technology n Very fast switching n Surface mount package. 3. Applications n Primary side switch in DC to

文件：393.85 Kbytes 页数：13 Pages

NEXPERIA

安世

N-channel enhancement mode field-effect transistor

Description\nN-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™1 technology. ■ TrenchMOS™ technology\n■ Very fast switching\n■ Surface mount package.Applications\n■ Primary side switch in DC to DC converters\n■ High speed line driver\n■ Fast general purpose switch.;

恩XP

N-channel TrenchMOS standard level FET

Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.

Nexperia

安世