TrenchMOS transistor Standard level FET

GENERAL DESCRIPTION N-channel enhancement mode standard level field-effect power transistor in a plastic envelope suitable for surface mounting. Using ’trench’ technology, the device features very low on-state resistance and has integral zener diodes giving ESD protection up to 2kV. It is intende

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PHI

飞利浦

TrenchMOS transistor Standard level FET

恩XP

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type

High Speed Switching Applications Analog Switch Applications • Input impedance is high. Driving current is extremely low. • Can be directly driven by a CMOS device even at low voltage due to low gate threshold voltage. • High-speed switching. • Housed in a ultra-small package which is sui

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TOSHIBA

东芝

High Speed Switching Applications

文件：147.48 Kbytes 页数：5 Pages

TOSHIBA

东芝

30V N-CHANNEL ENHANCEMENT MODE MOSFET

Application Battery protection Load switch Uninterruptible power supply

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YFWDIODE

佑风微