TrenchMOS transistor Standard level FET

Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. Product availability: PHT6N06T in SOT223.

文件：71.29 Kbytes 页数：10 Pages

PHI

飞利浦

TrenchMOS™ standard level FET

1.1 Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. Product availability: PHT6N06T in SOT223. 1.2 Features 1.3 Applications n Low on-state resistance n Low QGD n Fast switching n Surface mounting package. n DC to DC converte

文件：345.7 Kbytes 页数：13 Pages

NEXPERIA

安世

TrenchMOS™ standard level FET

Description\nN-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology.\nProduct availability:\nPHT6N06T in SOT223.

恩XP

N-channel TrenchMOS standard level FET

Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.

Nexperia

安世