TrenchMOS transistor Standard level FET

GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface mounting. Using ’trench’ technology the device features very low on-state resistance and has integral zener diodes giving ESDprotection. It is intended for use in DC

文件：75.34 Kbytes 页数：10 Pages

PHI

飞利浦

60V N-Channel Enhancement Mode MOSFET

Features  RDS(ON), VGS@10V, ID@6A

文件：908.72 Kbytes 页数：6 Pages

PANJIT

強茂

60V N-Channel Enhancement Mode MOSFET

Features  RDS(ON), VGS@10V, ID@6A

文件：820.13 Kbytes 页数：6 Pages

PANJIT

強茂

N-channel TrenchMOS transistor Logic level FET

GENERAL DESCRIPTION N-channel enhancement mode, logic level, field-effect power transistor in a plastic envelope using ’trench’ technology. The PHP11N06LT is supplied in the SOT78 (TO220AB) conventional leaded package. The PHB11N06LT is supplied in the SOT404 (D2PAK) surface mounting pa

文件：114.92 Kbytes 页数：12 Pages

PHI

飞利浦

N-channel TrenchMOS transistor Logic level FET

GENERAL DESCRIPTION N-channel enhancement mode, logic level, field-effect power transistor in a plastic envelope using ’trench’ technology. The PHP11N06LT is supplied in the SOT78 (TO220AB) conventional leaded package. The PHB11N06LT is supplied in the SOT404 (D2PAK) surface mounting pa

文件：114.92 Kbytes 页数：12 Pages

PHI

飞利浦

N-channel TrenchMOS transistor Logic level FET

GENERAL DESCRIPTION N-channel enhancement mode, logic level, field-effect power transistor in a plastic envelope using ’trench’ technology. The PHP11N06LT is supplied in the SOT78 (TO220AB) conventional leaded package. The PHB11N06LT is supplied in the SOT404 (D2PAK) surface mounting pa

文件：114.92 Kbytes 页数：12 Pages

PHI

飞利浦