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11N06	文件：114.92 Kbytes Page：12 Pages	N-channel TrenchMOS transistor Logic level FET GENERALDESCRIPTION N-channelenhancementmode,logiclevel,field-effectpowertransistorinaplasticenvelopeusing’trench’technology. ThePHP11N06LTissuppliedintheSOT78(TO220AB)conventionalleadedpackage. ThePHB11N06LTissuppliedintheSOT404(D2PAK)surfacemountingpa	PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦	Philips
11N06LT	文件：114.92 Kbytes Page：12 Pages	N-channel TrenchMOS transistor Logic level FET GENERALDESCRIPTION N-channelenhancementmode,logiclevel,field-effectpowertransistorinaplasticenvelopeusing’trench’technology. ThePHP11N06LTissuppliedintheSOT78(TO220AB)conventionalleadedpackage. ThePHB11N06LTissuppliedintheSOT404(D2PAK)surfacemountingpa	PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦	Philips
11N06LTA	文件：114.92 Kbytes Page：12 Pages	N-channel TrenchMOS transistor Logic level FET GENERALDESCRIPTION N-channelenhancementmode,logiclevel,field-effectpowertransistorinaplasticenvelopeusing’trench’technology. ThePHP11N06LTissuppliedintheSOT78(TO220AB)conventionalleadedpackage. ThePHB11N06LTissuppliedintheSOT404(D2PAK)surfacemountingpa	PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦	Philips
PHB11N06LT	文件：76.41 Kbytes Page：9 Pages	TrenchMOStransistorLogiclevelFET GENERALDESCRIPTION N-channelenhancementmode,logiclevel,field-effectpowertransistorinaplasticenvelopeusing’trench’technology. ThePHP11N06LTissuppliedintheSOT78(TO220AB)conventionalleadedpackage. ThePHB11N06LTissuppliedintheSOT404(D2PAK)surfacemountingpa	PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦	Philips
PHB11N06LT	文件：114.92 Kbytes Page：12 Pages	N-channelTrenchMOStransistorLogiclevelFET GENERALDESCRIPTION N-channelenhancementmode,logiclevel,field-effectpowertransistorinaplasticenvelopeusing’trench’technology. ThePHP11N06LTissuppliedintheSOT78(TO220AB)conventionalleadedpackage. ThePHB11N06LTissuppliedintheSOT404(D2PAK)surfacemountingpa	PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦	Philips
PHD11N06LT	文件：76.41 Kbytes Page：9 Pages	TrenchMOStransistorLogiclevelFET GENERALDESCRIPTION N-channelenhancementmode,logiclevel,field-effectpowertransistorinaplasticenvelopeusing’trench’technology. ThePHP11N06LTissuppliedintheSOT78(TO220AB)conventionalleadedpackage. ThePHB11N06LTissuppliedintheSOT404(D2PAK)surfacemountingpa	PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦	Philips
PHD11N06LT	文件：114.92 Kbytes Page：12 Pages	N-channelTrenchMOStransistorLogiclevelFET GENERALDESCRIPTION N-channelenhancementmode,logiclevel,field-effectpowertransistorinaplasticenvelopeusing’trench’technology. ThePHP11N06LTissuppliedintheSOT78(TO220AB)conventionalleadedpackage. ThePHB11N06LTissuppliedintheSOT404(D2PAK)surfacemountingpa	PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦	Philips
PHP11N06LT	文件：114.92 Kbytes Page：12 Pages	N-channelTrenchMOStransistorLogiclevelFET GENERALDESCRIPTION N-channelenhancementmode,logiclevel,field-effectpowertransistorinaplasticenvelopeusing’trench’technology. ThePHP11N06LTissuppliedintheSOT78(TO220AB)conventionalleadedpackage. ThePHB11N06LTissuppliedintheSOT404(D2PAK)surfacemountingpa	PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦	Philips
PHT11N06	文件：69.16 Kbytes Page：9 Pages	TrenchMOStransistorLogiclevelFET GENERALDESCRIPTION N-channelenhancementmodelogiclevelfield-effectpowertransistorinaplasticenvelopesuitableforsurfacemounting.Thedevicefeaturesverylowon-stateresistanceandhasintegralzenerdiodesgivingESDprotection.ItisintendedforuseinDC-DCconvertersandgeneral	PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦	Philips
PHT11N06	文件：75.34 Kbytes Page：10 Pages	TrenchMOStransistorStandardlevelFET GENERALDESCRIPTION N-channelenhancementmodelogiclevelfield-effectpowertransistorinaplasticenvelopesuitableforsurfacemounting.Using’trench’technologythedevicefeaturesverylowon-stateresistanceandhasintegralzenerdiodesgivingESDprotection.ItisintendedforuseinDC	PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦	Philips
PHT11N06LT	文件：69.16 Kbytes Page：9 Pages	TrenchMOStransistorLogiclevelFET GENERALDESCRIPTION N-channelenhancementmodelogiclevelfield-effectpowertransistorinaplasticenvelopesuitableforsurfacemounting.Thedevicefeaturesverylowon-stateresistanceandhasintegralzenerdiodesgivingESDprotection.ItisintendedforuseinDC-DCconvertersandgeneral	PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦	Philips
PHT11N06T	文件：75.34 Kbytes Page：10 Pages	TrenchMOStransistorStandardlevelFET GENERALDESCRIPTION N-channelenhancementmodelogiclevelfield-effectpowertransistorinaplasticenvelopesuitableforsurfacemounting.Using’trench’technologythedevicefeaturesverylowon-stateresistanceandhasintegralzenerdiodesgivingESDprotection.ItisintendedforuseinDC	PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦	Philips
PJD11N06A	文件：908.72 Kbytes Page：6 Pages	60VN-ChannelEnhancementModeMOSFET Features RDS(ON),VGS@10V,ID@6A	PANJITPANJIT International Inc. 强茂強茂股份有限公司	PANJIT
PJD11N06A-AU	文件：820.13 Kbytes Page：6 Pages	60VN-ChannelEnhancementModeMOSFET Features RDS(ON),VGS@10V,ID@6A	PANJITPANJIT International Inc. 强茂強茂股份有限公司	PANJIT

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市勤思达科技有限公司	11N06		12+	TO-263	15000	全新原装,绝对正品,公司现货供应。	询价
深圳庞田科技有限公司	11N06	PHILIPS	2023+环保现货	TO-263	10	专注军工、汽车、医疗、工业等方案配套一站式服务	询价
深圳市创新迹电子有限公司	11N06	PHILIPS/飞利浦	23+	TO-263	6000	专注配单,只做原装进口现货	询价
深圳市安富世纪电子有限公司	11N06	PHILIPS/飞利浦	23+	TO-263	6000	专注配单,只做原装进口现货	询价
深圳市百视威讯电子科技有限公司	11N06LTA		23+	N/A	12850	正品授权货源可靠	询价
贸泽芯城（深圳）电子科技有限公司	11N06LTA	NXP/恩智浦	2021+	TO-263	5258	原厂授权代理,海外优势订货渠道。可提供大量库存,详	询价
瀚佳科技(深圳)有限公司	11N10	infineon	2020+	P-TO252	16800	绝对原装进口现货,假一赔十,价格优势!	询价
深圳市大联智电子有限公司	11N10	infineon	2022+	P-TO252	7300	原装现货	询价
深圳市芯为科技有限公司	11N10	infineon	2023+	P-TO252	16800	芯为只有原装,公司现货	询价
深圳市华博特电子有限公司	11N100L-TF3-T	UTC	23/22+	TO220F	6000	20年老代理.原厂技术支持	询价

更多11N06供应商更新时间2024-4-30 11:04:00

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