N-channel TrenchMOS transistor Logic level FET

GENERAL DESCRIPTION N-channel enhancement mode, logic level, field-effect power transistor in a plastic envelope using ’trench’ technology. FEATURES • ’Trench’ technology • Low on-state resistance • Fast switching • Logic level compatible Applications: • d.c. to d.c. co

文件：112.45 Kbytes 页数：11 Pages

PHI

飞利浦

TrenchMOS transistor Logic level FET

GENERAL DESCRIPTION N-channel enhancement mode, logic level, field-effect power transistor in a plastic envelope using ’trench’ technology. FEATURES • ’Trench’ technology • Low on-state resistance • Fast switching • Logic level compatible Applications: • d.c. to d.c. co

文件：82.44 Kbytes 页数：10 Pages

PHI

飞利浦

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 19A@ TC=25℃ ·Drain Source Voltage -VDSS= 55V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 70mΩ(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

文件：371.28 Kbytes 页数：2 Pages

ISC

无锡固电

N-channel TrenchMOSÔ transistor Logic level FET

FEATURES • ’Trench’ technology • Low on-state resistance • Fast switching • Logic level compatible GENERAL DESCRIPTION N-channel enhancement mode, logic level, field-effect power transistor in a plastic envelope using ’trench’ technology. Applications:- • d.c. to d.c. converters • swi

文件：233.59 Kbytes 页数：12 Pages

NEXPERIA

安世

TrenchMOSO transistor Standard level FET

GENERAL DESCRIPTION N-channel enhancement mode standard level field-effect power transistor in a plastic envelope using ’trench’ technology. The device features very low on-state resistance and has integral zener diodes giving ESD protection up to 2kV. It is intended for use in DC-DC converters

文件：65.06 Kbytes 页数：8 Pages

PHI

飞利浦

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 21A@ TC=25℃ ·Drain Source Voltage -VDSS= 55V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 75mΩ(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

文件：372.23 Kbytes 页数：2 Pages

ISC

无锡固电

Dual P-channel enhancement mode MOS transistor

DESCRIPTION Two P-channel enhancement mode MOS transistors in an 8-pin SOT96-1 (SO8) SMD plastic package. FEATURES • Very low on-state resistance • High-speed switching • No secondary breakdown • Low threshold. APPLICATIONS • Power management • DC-DC converters • General purpose switch.

文件：54.63 Kbytes 页数：8 Pages

PHI

飞利浦

N-channel TrenchMOSTM logic level FET

Description Logic level N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. Features ■ Logic level threshold ■ Very low on-state resistance. Applications ■ Motors, lamps, solenoids ■ Uninterruptible power supplies ■ DC-to-DC converters ■ Ge

文件：93.75 Kbytes 页数：13 Pages

PHI

飞利浦

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 75A@ TC=25℃ ·Drain Source Voltage -VDSS= 40V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 2.8mΩ(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

文件：372.23 Kbytes 页数：2 Pages

ISC

无锡固电

Dual P-channel enhancement mode MOS transistor

DESCRIPTION Two P-channel enhancement mode MOS transistors in an 8-pin plastic SOT96-1 (SO8) package. FEATURES • High-speed switching • No secondary breakdown • Very low on-resistance. APPLICATIONS • Motor and actuator driver • Power management • Synchronized rectification.

文件：119.81 Kbytes 页数：12 Pages

PHI

飞利浦