PHP11N50E

PowerMOS transistors Avalanche energy rated

VDSS=500V ID=10.4A RDS(ON)≤0.6Ω GENERALDESCRIPTION N-channel,enhancementmodefield-effectpowertransistor,intendedforuseinoff-lineswitchedmodepowersupplies,T.V.andcomputermonitorpowersupplies,d.c.tod.c.converters,motorcontrolcircuitsandgeneralpur

PHW11N50E

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=11A@TC=25℃ ·DrainSourceVoltage-VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.55Ω(Max)@VGS=10V DESCRIPTION ·DC-to-DCConverter ·GeneralIndustrialApplications ·PowerMotorControl

PHW11N50E

PowerMOStransistorsAvalancheenergyrated

VDSS=500V ID=10.4A RDS(ON)≤0.6Ω GENERALDESCRIPTION N-channel,enhancementmodefield-effectpowertransistor,intendedforuseinoff-lineswitchedmodepowersupplies,T.V.andcomputermonitorpowersupplies,d.c.tod.c.converters,motorcontrolcircuitsandgeneralpur

PHW11N50E

PowerMOStransistorsAvalancheenergyrated

VDSS=500V ID=10.4A RDS(ON)≤0.6Ω GENERALDESCRIPTION N-channel,enhancementmodefield-effectpowertransistor,intendedforuseinoff-lineswitchedmodepowersupplies,T.V.andcomputermonitorpowersupplies,d.c.tod.c.converters,motorcontrolcircuitsandgeneralpur

PSM11N50CT

11.6A500VSingleN?륝hannelPowerMOSFET

SIF11N50E

N-CHANNELPOWERMOSFET

SIHFB11N50A

PowerMOSFET

SIHFB11N50A

N-Channel650V(D-S)SuperJunctionPowerMOSFET

FEATURES •Lowfigure-of-merit(FOM)RonxQg •Lowinputcapacitance(Ciss) •Reducedswitchingandconductionlosses •Ultralowgatecharge(Qg) •Avalancheenergyrated(UIS) APPLICATIONS •Serverandtelecompowersupplies •Switchmodepowersupplies(SMPS) •Powerfactorcorrection

SIHFS11N50A

PowerMOSFET

SIHFS11N50A

N-Channel650V(D-S)PowerMOSFET